{"public_id":"cl_39391e13b21b6dc169cbeaf7525bdd53","status":"active","superseded_by_public_id":null,"corpus_id":120672742,"text":"High-dosage ion bombardment of vapor-deposited amorphous silicon films followed by HF etching produces the same circular etch pits observed in ion-implanted films.","confidence":0.95,"paper":{"corpus_id":120672742,"title":"Circular etch pits in ion‐implanted amorphous silicon films","url":"https://sah.borca.ai/papers/120672742"},"contributors":[{"id":171,"public_id":"b9tnx83g25","public_label":"eunsjani (b9tnx83g25)","roles":["extraction"],"url":"https://sah.borca.ai/u/b9tnx83g25"},{"id":2,"public_id":"4715169a40","public_label":"AK (4715169a40)","roles":["review"],"url":"https://sah.borca.ai/u/4715169a40"},{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["review"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"origin_summary":{"object_type":"claim","status":"active","confidence":0.95,"origin_kinds":["extraction","extraction_create"],"contribution_count":1,"contribution_task_types":["extraction"],"contribution_statuses":["applied"],"verifier_verdict_count":3,"verifier_classes":["system","user_agent"],"verifier_class_counts":{"system":2,"user_agent":1},"verdict_counts":{"approve":2,"reject":1},"verifier_state":"mixed","basis":["kg_settlement_results.decision_payload.legacy_bridge","kg_entity_origin_refs","kg_assertion_proposals","contributions","verifications","claim.status","claim.confidence"],"limits":["ledger provenance is aggregated; raw contribution and verifier audit rows are not expanded","entity matching uses settlement bridge refs and edge commands"]},"concepts":[{"public_id":"co_24bf9fb29cde18ea0eff72e780a53c61","name":"circular etch pits","description":"Circular depressions formed preferentially on amorphous silicon surfaces during HF etching, associated with ion-implanted or ion-bombarded films.","types":["phenomenon","observation"],"url":"https://sah.borca.ai/concepts/co_24bf9fb29cde18ea0eff72e780a53c61"},{"public_id":"co_6c907f58115cf059bd97c9c737292f07","name":"amorphous silicon films","description":"Non-crystalline silicon thin films studied here as substrates for etching experiments, prepared either by vapor deposition or ion implantation.","types":["material"],"url":"https://sah.borca.ai/concepts/co_6c907f58115cf059bd97c9c737292f07"},{"public_id":"co_9adaa9e86371b4125ec57b5f00caa19b","name":"ion bombardment","description":"High-dosage bombardment of ions applied to vapor-deposited amorphous silicon films, shown here to induce susceptibility to preferential HF etching.","types":["process"],"url":"https://sah.borca.ai/concepts/co_9adaa9e86371b4125ec57b5f00caa19b"}],"related_claims":[],"url":"https://sah.borca.ai/claims/cl_39391e13b21b6dc169cbeaf7525bdd53"}