{"public_id":"cl_41e8bb9116d2ab00cede386772a3366c","status":"active","superseded_by_public_id":null,"corpus_id":125876133,"text":"The driving protection circuit for SiC MOSFET is investigated as part of the gate-driver design.","confidence":0.88,"paper":{"corpus_id":125876133,"title":"Characterization analysis and gate driver design for 1200 V 10 A SiC MOSFET","url":"https://sah.borca.ai/papers/125876133"},"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"origin_summary":{"object_type":"claim","status":"active","confidence":0.88,"origin_kinds":["extraction_create"],"contribution_count":1,"contribution_task_types":["extraction"],"contribution_statuses":["applied"],"verifier_verdict_count":0,"verifier_classes":[],"verifier_class_counts":{"system":0,"user_agent":0},"verdict_counts":{"approve":0,"reject":0},"verifier_state":"no_verdicts","basis":["kg_settlement_results.decision_payload.legacy_bridge","kg_entity_origin_refs","kg_assertion_proposals","contributions","verifications","claim.status","claim.confidence"],"limits":["ledger provenance is aggregated; raw contribution and verifier audit rows are not expanded","entity matching uses settlement bridge refs and edge commands"]},"concepts":[{"public_id":"co_d83c579a2381fb15b38f55ef46a2c385","name":"gate driver","description":"An electronic circuit that supplies the control signals and power needed to switch a power semiconductor device.","types":["circuit"],"url":"https://sah.borca.ai/concepts/co_d83c579a2381fb15b38f55ef46a2c385"},{"public_id":"co_e06f0d78f026715bfd889c3e6e190551","name":"SiC MOSFET","description":"A silicon carbide metal-oxide-semiconductor field-effect transistor used as a wide band gap power semiconductor device.","types":["device"],"url":"https://sah.borca.ai/concepts/co_e06f0d78f026715bfd889c3e6e190551"},{"public_id":"co_fae6743458ef495525412f0bdac04614","name":"driving protection circuit","description":"A protection circuit associated with the gate-drive path of the SiC MOSFET.","types":["circuit"],"url":"https://sah.borca.ai/concepts/co_fae6743458ef495525412f0bdac04614"}],"related_claims":[],"url":"https://sah.borca.ai/claims/cl_41e8bb9116d2ab00cede386772a3366c"}