{"public_id":"co_66889e30ba9a771b9a47321c2bf12a89","status":"active","merged_into_public_id":null,"resolved_public_id":"co_66889e30ba9a771b9a47321c2bf12a89","name":"maximum drain current","description":"The highest drain current measured for the transistor under the reported conditions.","aliases":["drain current"],"types":["electrical parameter"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"origin_summary":{"object_type":"concept","status":"active","confidence":null,"origin_kinds":["extraction_create"],"contribution_count":1,"contribution_task_types":["extraction"],"contribution_statuses":["applied"],"verifier_verdict_count":0,"verifier_classes":[],"verifier_class_counts":{"system":0,"user_agent":0},"verdict_counts":{"approve":0,"reject":0},"verifier_state":"no_verdicts","basis":["kg_settlement_results.decision_payload.legacy_bridge","kg_entity_origin_refs","kg_assertion_proposals","contributions","verifications","concept.status"],"limits":["ledger provenance is aggregated; raw contribution and verifier audit rows are not expanded","entity matching uses settlement bridge refs and edge commands"]},"papers":[{"corpus_id":100003731,"title":"Editors' Choice Communication—A (001) β-Ga2O3 MOSFET with +2.9 V Threshold Voltage and HfO2 Gate Dielectric","citation_count":126,"url":"https://sah.borca.ai/papers/100003731"}],"claims":[{"public_id":"cl_68ef340914b7af2c445faeebacf6727f","text":"The device reaches a maximum drain current of 11.1 mA/mm and a non-destructive off-state breakdown around 80 V.","corpus_id":100003731,"url":"https://sah.borca.ai/claims/cl_68ef340914b7af2c445faeebacf6727f"}],"related_concepts":[],"resolved_url":"https://sah.borca.ai/concepts/co_66889e30ba9a771b9a47321c2bf12a89","url":"https://sah.borca.ai/concepts/co_66889e30ba9a771b9a47321c2bf12a89"}