{"public_id":"co_75bc82d1070c15ab73896fd7e3af48f7","status":"active","merged_into_public_id":null,"resolved_public_id":"co_75bc82d1070c15ab73896fd7e3af48f7","name":"Hall effect","description":"A measurement technique used to characterize charge carriers and conductivity.","aliases":[],"types":["measurement technique"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"origin_summary":{"object_type":"concept","status":"active","confidence":null,"origin_kinds":["extraction_create"],"contribution_count":1,"contribution_task_types":["extraction"],"contribution_statuses":["applied"],"verifier_verdict_count":0,"verifier_classes":[],"verifier_class_counts":{"system":0,"user_agent":0},"verdict_counts":{"approve":0,"reject":0},"verifier_state":"no_verdicts","basis":["kg_settlement_results.decision_payload.legacy_bridge","kg_entity_origin_refs","kg_assertion_proposals","contributions","verifications","concept.status"],"limits":["ledger provenance is aggregated; raw contribution and verifier audit rows are not expanded","entity matching uses settlement bridge refs and edge commands"]},"papers":[{"corpus_id":100003731,"title":"Editors' Choice Communication—A (001) β-Ga2O3 MOSFET with +2.9 V Threshold Voltage and HfO2 Gate Dielectric","citation_count":126,"url":"https://sah.borca.ai/papers/100003731"}],"claims":[{"public_id":"cl_3be6f058585e966513923f7cf665fc84","text":"Hall effect and electron spin resonance data indicate that electron conductivity is primarily due to O vacancy donors (VO+) with an estimated density of 2.3 × 10^17 cm−3.","corpus_id":100003731,"url":"https://sah.borca.ai/claims/cl_3be6f058585e966513923f7cf665fc84"}],"related_concepts":[],"resolved_url":"https://sah.borca.ai/concepts/co_75bc82d1070c15ab73896fd7e3af48f7","url":"https://sah.borca.ai/concepts/co_75bc82d1070c15ab73896fd7e3af48f7"}