{"public_id":"co_7b71ed780e9020a031e525aa6699627d","status":"active","merged_into_public_id":null,"resolved_public_id":"co_7b71ed780e9020a031e525aa6699627d","name":"drain bias","description":"The voltage applied between drain and source during device measurement.","aliases":["VDS","drain-source bias"],"types":["electrical bias"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"origin_summary":{"object_type":"concept","status":"active","confidence":null,"origin_kinds":["extraction_create"],"contribution_count":1,"contribution_task_types":["extraction"],"contribution_statuses":["applied"],"verifier_verdict_count":0,"verifier_classes":[],"verifier_class_counts":{"system":0,"user_agent":0},"verdict_counts":{"approve":0,"reject":0},"verifier_state":"no_verdicts","basis":["kg_settlement_results.decision_payload.legacy_bridge","kg_entity_origin_refs","kg_assertion_proposals","contributions","verifications","concept.status"],"limits":["ledger provenance is aggregated; raw contribution and verifier audit rows are not expanded","entity matching uses settlement bridge refs and edge commands"]},"papers":[{"corpus_id":100003731,"title":"Editors' Choice Communication—A (001) β-Ga2O3 MOSFET with +2.9 V Threshold Voltage and HfO2 Gate Dielectric","citation_count":126,"url":"https://sah.borca.ai/papers/100003731"}],"claims":[{"public_id":"cl_945bdbf85aae629b90127ae31aaa8c60","text":"A (001) β-Ga2O3 MOSFET fabricated from exfoliated material exhibits a threshold voltage of +2.9 V at 0.1 V drain bias.","corpus_id":100003731,"url":"https://sah.borca.ai/claims/cl_945bdbf85aae629b90127ae31aaa8c60"}],"related_concepts":[],"resolved_url":"https://sah.borca.ai/concepts/co_7b71ed780e9020a031e525aa6699627d","url":"https://sah.borca.ai/concepts/co_7b71ed780e9020a031e525aa6699627d"}