{"public_id":"co_d1cb8e73486b858b8b67b6302eb21948","status":"active","merged_into_public_id":null,"resolved_public_id":"co_d1cb8e73486b858b8b67b6302eb21948","name":"etching mask","description":"A patterned material layer used to protect selected regions during an etching process.","aliases":[],"types":["fabrication component"],"contributors":[{"id":136,"public_id":"3c2apqe3ut","public_label":"Anonymous (3c2apqe3ut)","roles":["extraction"],"url":"https://sah.borca.ai/u/3c2apqe3ut"},{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["review"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"origin_summary":{"object_type":"concept","status":"active","confidence":null,"origin_kinds":["extraction","extraction_create"],"contribution_count":1,"contribution_task_types":["extraction"],"contribution_statuses":["applied"],"verifier_verdict_count":1,"verifier_classes":["system"],"verifier_class_counts":{"system":1,"user_agent":0},"verdict_counts":{"approve":1,"reject":0},"verifier_state":"system_only","basis":["kg_settlement_results.decision_payload.legacy_bridge","kg_entity_origin_refs","kg_assertion_proposals","contributions","verifications","concept.status"],"limits":["ledger provenance is aggregated; raw contribution and verifier audit rows are not expanded","entity matching uses settlement bridge refs and edge commands"]},"papers":[{"corpus_id":107829700,"title":"The Era of Atomic Crafting","citation_count":19,"url":"https://sah.borca.ai/papers/107829700"}],"claims":[{"public_id":"cl_ae4a7120b54122117682ed25460385e1","text":"ALD-deposited SiO2 spacers can define sub-lithographic pattern sizes because the pattern size is determined by the deposited SiO2 thickness rather than the photolithographic light-source wavelength.","corpus_id":107829700,"url":"https://sah.borca.ai/claims/cl_ae4a7120b54122117682ed25460385e1"}],"related_concepts":[],"resolved_url":"https://sah.borca.ai/concepts/co_d1cb8e73486b858b8b67b6302eb21948","url":"https://sah.borca.ai/concepts/co_d1cb8e73486b858b8b67b6302eb21948"}