{"public_id":"co_f9b9c8097df8e9646d2e2c6d04c2ae53","status":"active","merged_into_public_id":null,"resolved_public_id":"co_f9b9c8097df8e9646d2e2c6d04c2ae53","name":"high-power high-frequency devices","description":"Devices intended to operate at high power levels and high operating frequencies.","aliases":[],"types":["device category"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"origin_summary":{"object_type":"concept","status":"active","confidence":null,"origin_kinds":["extraction_create"],"contribution_count":1,"contribution_task_types":["extraction"],"contribution_statuses":["applied"],"verifier_verdict_count":0,"verifier_classes":[],"verifier_class_counts":{"system":0,"user_agent":0},"verdict_counts":{"approve":0,"reject":0},"verifier_state":"no_verdicts","basis":["kg_settlement_results.decision_payload.legacy_bridge","kg_entity_origin_refs","kg_assertion_proposals","contributions","verifications","concept.status"],"limits":["ledger provenance is aggregated; raw contribution and verifier audit rows are not expanded","entity matching uses settlement bridge refs and edge commands"]},"papers":[{"corpus_id":122963968,"title":"Present Status and Future Prospect of Widegap Semiconductor High-Power Devices","citation_count":304,"url":"https://sah.borca.ai/papers/122963968"}],"claims":[{"public_id":"cl_1d295aada702e7b88df589b13af837e9","text":"Silicon carbide and gallium nitride are the principal widegap semiconductor materials highlighted for high-power high-frequency devices and high-power switching devices.","corpus_id":122963968,"url":"https://sah.borca.ai/claims/cl_1d295aada702e7b88df589b13af837e9"}],"related_concepts":[],"resolved_url":"https://sah.borca.ai/concepts/co_f9b9c8097df8e9646d2e2c6d04c2ae53","url":"https://sah.borca.ai/concepts/co_f9b9c8097df8e9646d2e2c6d04c2ae53"}