Device-size atomistic models of amorphous silicon

The atomic structure of amorphous materials is believed to be well described by the continuous-random-network model. We present an algorithm for the generation of large, high-quality continuous random networks. The algorithm is a variation of the sillium approach introduced by Wooten, Winer, and Weaire [Phys. Rev. Lett. 54, 1392 (1985)]. By employing local relaxation techniques, local atomic rearrangements can be tried that scale almost independently of system size. This scaling property of the algorithm paves the way for the generation of realistic device-size atomic networks.

• Publication year

  2001

• Venue

  Physical Review B

• Publication date

  2001-07-17

• Fields of study

  Physics

• Identifiers
  DOI 10.1103/PhysRevB.64.245214arXiv cond-mat/0107358
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar

• No claims are published for this paper.

• No concepts are published for this paper.

• No references are available for this paper.

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