Improvement of Resistive Switching Uniformity for Al–Zn–Sn–O-Based Memory Device With Inserting HfO2 Layer

No abstract is available for this paper.

• Publication year

  2014

• Venue

  IEEE Electron Device Letters

• Publication date

  2014-10-24

• Fields of study

  Materials Science, Engineering

• Identifiers
  DOI 10.1109/LED.2014.2363491
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar

• No claims are published for this paper.

• No concepts are published for this paper.

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