Light-Emitting Devices Based on Top-down Fabricated GaAs Quantum Nanodisks

Quantum dots photonic devices based on the III–V compound semiconductor technology offer low power consumption, temperature stability and high-speed modulation. We fabricated GaAs nanodisks (NDs) of sub-20-nm diameters by a top-down process using a biotemplate and neutral beam etching (NBE). The GaAs NDs were embedded in an AlGaAs barrier regrown by metalorganic vapor phase epitaxy (MOVPE). The temperature dependence of photoluminescence emission energies and the transient behavior were strongly affected by the quantum confinement effects of the embedded NDs. Therefore, the quantum levels of the NDs may be tuned by controlling their dimensions. We combined NBE and MOVPE in a high-throughput process compatible with industrial production systems to produce GaAs NDs with tunable optical characteristics. ND light emitting diode exhibited a narrow spectral width of 38 nm of high-intensity emission as a result of small deviation of ND sizes and superior crystallographic quality of the etched GaAs/AlGaAs layer.

• Publication year

  2015

• Venue

  Scientific Reports

• Publication date

  2015-03-20

• Fields of study

  Medicine, Materials Science, Physics, Engineering

• Identifiers
  DOI 10.1038/srep09371PMID 25792119PMCID 4366859
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar, PubMed

• No claims are published for this paper.

• No concepts are published for this paper.

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