Puddle-Induced Resistance Oscillations in the Breakdown of the Graphene Quantum Hall Effect.

We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The ν=2 quantized plateau appears from fields B≃5  T and persists up to B≃80  T. At high current density, in the breakdown regime, the longitudinal resistance oscillates with a 1/B periodicity and an anomalous phase, which we relate to the presence of additional electron reservoirs. The high field experimental data suggest that these reservoirs induce a continuous increase of the carrier density up to the highest available magnetic field, thus enlarging the quantum plateaus. These in-plane inhomogeneities, in the form of high carrier density graphene pockets, modulate the quantum Hall effect breakdown and decrease the breakdown current.

• Publication year

  2016

• Venue

  Physical Review Letters

• Publication date

  2016-11-24

• Fields of study

  Medicine, Physics

• Identifiers
  DOI 10.1103/PhysRevLett.117.237702arXiv 1611.08179PMID 27982608
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar, PubMed

• No claims are published for this paper.

• No concepts are published for this paper.

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