A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag2S devices.

The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Suitably prepared samples exhibit memristive behavior with technologically optimal ON and OFF state resistances yielding to resistive switching on the nanosecond time scale. Utilizing point contact Andreev reflection spectroscopy, we studied the nature of electron transport in the active volume of memristive junctions showing that both the ON and OFF states correspond to truly nanometer-scale, highly transparent metallic channels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale memory cells which can be switched by nanosecond voltage pulses.

• Publication year

  2014

• Venue

  Nanoscale

• Publication date

  2014-02-13

• Fields of study

  Materials Science, Physics, Medicine, Engineering

• Identifiers
  DOI 10.1039/c3nr05682aPMID 24481239
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar, PubMed

• No claims are published for this paper.

• No concepts are published for this paper.

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