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Nanoribbon‐Based Flexible High‐Performance Transistors Fabricated at Room Temperature

Ayoub Zumeit,W. Navaraj,D. Shakthivel,R. Dahiya

Published 2020 in Advanced Electronic Materials

ABSTRACT

Si‐nanoribbon‐based high‐performance field‐effect transistors (FETs) with room temperature (RT)‐deposited dielectric are presented. The distinct feature of these devices is that the high‐quality SiNx dielectric deposition at RT, directly on the transfer‐printed nanoribbons, is compatible with most flexible substrates. The performance of these FETs (mobility ≈656 cm2 V−1 s−1 and on/off ratio >106) is on par with the highest performance of similar devices reported with high‐temperature processes, and significantly higher than devices reported with low‐temperature processes. The transfer and output characteristics of nanoribbon‐based field‐effect transistors under planar, tensile, and compressive bending and multiple bending cycles (100) show excellent mechanical stability of the devices as they retain performance. The device characteristics are also compared with the equivalent simulation data. The excellent response of nanoribbon‐based FETs and the fabrication compatibility with diverse flexible substrates makes the presented approach attractive for flexible electronics applications such as conformal tactile active matrix sensors for e‐skin, where high performance is needed.

PUBLICATION RECORD

  • Publication year

    2020

  • Venue

    Advanced Electronic Materials

  • Publication date

    2020-02-18

  • Fields of study

    Materials Science, Physics, Engineering

  • Identifiers
    DOI 10.1002/aelm.201901023
  • External record

    Open on Semantic Scholar

  • Source metadata

    Semantic Scholar

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