Effect of Surface Oxidation on the Material Loss of InGaAs in Acidic Solutions

Indium gallium arsenide (InGaAs) is one of the candidate materials to overcome the physical limitation of Si due to its excellent electrical properties. The effect of surface oxidation on the etching characteristics of InGaAs surface in acidic solutions were investigated. InGaAs surfaces was etched in HCl/H2O2/H2O (CPM) and HNO3/H2O2/H2O (NPM), while there was no thickness change in diluted HCl or HNO3. The CPM-treated InGaAs surface had a lower etching rate than the NPM-treated one, while etching rate of oxidized layer was higher in diluted HCl than in HNO3. NaCl added in the NPM acts as an etching inhibitor for InGaAs and the etching rate was significantly suppressed. It is thought that Cl− anion inhibits the formation of hydroxyl radical (OH∙) or consumes OH∙ in acidic solution, inhibiting surface oxidation of InGaAs and suppressing its material loss.

• Publication year

  2021

• Venue

  Solid State Phenomena

• Publication date

  2021-02-09

• Fields of study

  Not labeled

• Identifiers
  DOI 10.4028/www.scientific.net/SSP.314.89
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar

• No claims are published for this paper.

• No concepts are published for this paper.

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