Compact stabilized semiconductor laser for frequency metrology.

We report on the development of a frequency modulatable 795 nm semiconductor laser based on self-injection locking to a high-quality-factor whispering-gallery-mode microresonator. The laser is characterized by residual amplitude modulation below -80  dB and frequency noise better than 300  Hz/Hz(1/2) at offset frequencies ranging from 100 Hz to 10 MHz. The frequency modulation speed and span of the laser exceed 1 MHz and 4 GHz, respectively. Locking of the laser to the Doppler-free saturated absorption resonance of the (87)Rb D1 line is demonstrated and relative frequency stability better than 10(-12) is measured for integration time spanning from 1 s to 1 day. The architecture demonstrated in this study is suitable for the realization of frequency modulatable lasers at any wavelength.

• Publication year

  2014

• Venue

  Applied Optics

• Publication date

  2014-11-18

• Fields of study

  Materials Science, Physics, Medicine, Engineering

• Identifiers
  DOI 10.1364/AO.54.003353arXiv 1411.4712PMID 25967323
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar, PubMed

• No claims are published for this paper.

• No concepts are published for this paper.

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