Transport and percolation in a low-density high-mobility two-dimensional hole system.

We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime (p > or approximately4x10;{9} cm;{-2}), the nonmonotonic temperature dependence ( approximately 50-300 mK) of the resistivity is consistent with temperature dependent screening of residual impurities. At a fixed temperature of T=50 mK, the conductivity versus density data indicate an inhomogeneity driven percolation-type transition to an insulating state at a critical density of 3.8x10;{9} cm;{-2}.

• Publication year

  2007

• Venue

  Physical Review Letters

• Publication date

  2007-10-18

• Fields of study

  Materials Science, Medicine, Physics

• Identifiers
  DOI 10.1103/PhysRevLett.99.236402arXiv 0710.3542PMID 18233387
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar, PubMed

• No claims are published for this paper.

• No concepts are published for this paper.

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