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Efficient and Robust Resistive Switching Behaviour of MoS$_{2}$ Based Memristor

Harsh Ranjan,Chandra Prakash Singh,Vivek Pratap Singh,Saurabh Kumar Pandey

Published 2025 in IEEE Transactions on Materials for Electron Devices

ABSTRACT

This study investigates the resistive-switching characteristics of MoS<inline-formula><tex-math notation="LaTeX">$_{2}$</tex-math></inline-formula>-based memristors, demonstrating their potential for different device applications. The device, composed of MoS<inline-formula><tex-math notation="LaTeX">$_{2}$</tex-math></inline-formula> nanosheets positioned between silver (Ag) and fluorine-doped tin oxide (FTO) electrodes, exhibits distinct switching behaviors under different conditions. Under DC bias, the device initially shows rectification-mediated switching, characterized by asymmetric current-voltage (I-V) curves due to Schottky barriers at the MoS<inline-formula><tex-math notation="LaTeX">$_{2}$</tex-math></inline-formula>-metal interfaces. However, upon ultra violet (UV) illumination, the device transitions to conductance-mediated switching, which is attributed to the generation of photogenerated carriers that reduce Schottky barriers and enhance conductivity. This transition provides a controllable mechanism for tuning the resistive states, enabling precise modulation of the device's performance. The memristor demonstrates repeatable and stable switching characteristics, making it suitable for low-power memory applications and neuromorphic systems. Furthermore, the dual response to both voltage and light makes the MoS<inline-formula><tex-math notation="LaTeX">$_{2}$</tex-math></inline-formula> memristor a promising candidate for developing light-tunable memory devices that can emulate synaptic behavior. These results highlight the potential of MoS<inline-formula><tex-math notation="LaTeX">$_{2}$</tex-math></inline-formula>-based memristors for integration into advanced memory and computational systems, offering a path toward energy-efficient, flexible, and multifunctional devices.

PUBLICATION RECORD

  • Publication year

    2025

  • Venue

    IEEE Transactions on Materials for Electron Devices

  • Publication date

    Unknown publication date

  • Fields of study

    Not labeled

  • Identifiers
    DOI 10.1109/TMAT.2025.3559871
  • External record

    Open on Semantic Scholar

  • Source metadata

    Semantic Scholar

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