Atomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory application

No abstract is available for this paper.

• Publication year

  2013

• Venue

  2013 IEEE International Electron Devices Meeting

• Publication date

  2013-12-01

• Fields of study

  Materials Science, Computer Science, Engineering

• Identifiers
  DOI 10.1109/IEDM.2013.6724726
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar

• No claims are published for this paper.

• No concepts are published for this paper.

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