Topological Dislocation Response in Elementary Semiconductors

We study elementary semiconductors and insulators that are symmetric under spatial inversion: silicon, diamond, germanium, and black phosphorene. These materials are ideal candidates for realizing obstructed atomic insulators, which differ from trivial atomic insulators by a quantized spatial shift of their electronic Wannier centers with respect to the atomic lattice. We use symmetry indicator invariants that allow the prediction of non-trivial responses to crystal dislocations in these materials. We find that edge dislocations generically exhibit a non-trivial response, while screw dislocations always display a trivial response. With the aid of numerical simulations of realistic tight-binding models, we confirm the presence of mid-gap polarization bands localized along dislocations in silicon, diamond, and germanium.

• Publication year

  2026

• Venue

  Unknown venue

• Publication date

  2026-02-24

• Fields of study

  Physics

• Identifiers
  arXiv 2602.20754
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar

• No claims are published for this paper.

• No concepts are published for this paper.

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