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Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications

G. Patterson,J. Suñé,Enrique Miranda

Published 2017 in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

ABSTRACT

Resistive switching devices are nonlinear electrical components that have drawn great attention in the design of new technologies including memory devices and neuromorphic circuits. In this paper, an SPICE implementation of a novel compact model is presented and put under test by means of different circuit configurations. The model is based on two identical opposite-biased diodes in series with a resistor where the switching behavior is governed by the creation and rupture of multiple conductive channels. Results show that the model is stable under different input sources and amplitudes and, with special interest, in multielement circuits. The model is validated with experimental data available in the literature. Both the corresponding SPICE code and schematic are provided in order to facilitate the model use and assessment.

PUBLICATION RECORD

  • Publication year

    2017

  • Venue

    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

  • Publication date

    2017-12-01

  • Fields of study

    Physics, Computer Science, Engineering

  • Identifiers
    DOI 10.1109/TCAD.2017.2756561
  • External record

    Open on Semantic Scholar

  • Source metadata

    Semantic Scholar

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