We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2D electron system. For most noninteger filling factors, we find that tunneling can be characterized by a single, well-defined tunneling rate. However, for spin-polarized quantum Hall states (n 1 ,3 , and13) tunneling occurs at two distinct rates that differ by up to 2 orders of magnitude. The dependence of the two rates on temperature and tunnel barrier thickness suggests that slow in-plane spin relaxation creates a bottleneck for tunneling of electrons.
TUNNELING INTO FERROMAGNETIC QUANTUM HALL STATES : OBSERVATION OF A SPIN BOTTLENECK
H. B. Chan,R. Ashoori,L. Pfeiffer,T. K.W.WestM.I.,B. Labs
Published 1999 in Physical Review Letters
ABSTRACT
PUBLICATION RECORD
- Publication year
1999
- Venue
Physical Review Letters
- Publication date
1999-05-26
- Fields of study
Physics
- Identifiers
- External record
- Source metadata
Semantic Scholar
CITATION MAP
EXTRACTION MAP
CLAIMS
- No claims are published for this paper.
CONCEPTS
- No concepts are published for this paper.
REFERENCES
- No references are available for this paper.
Showing 0-0 of 0 references · Page 1 of 1
CITED BY
Showing 1-11 of 11 citing papers · Page 1 of 1