TUNNELING INTO FERROMAGNETIC QUANTUM HALL STATES : OBSERVATION OF A SPIN BOTTLENECK

H. B. Chan,R. Ashoori,L. Pfeiffer,T. K.W.WestM.I.,B. Labs

Published 1999 in Physical Review Letters

ABSTRACT

We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2D electron system. For most noninteger filling factors, we find that tunneling can be characterized by a single, well-defined tunneling rate. However, for spin-polarized quantum Hall states (n 1 ,3 , and13) tunneling occurs at two distinct rates that differ by up to 2 orders of magnitude. The dependence of the two rates on temperature and tunnel barrier thickness suggests that slow in-plane spin relaxation creates a bottleneck for tunneling of electrons.

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