Betavoltaic battery performance: Comparison of modeling and experiment.

A verification of the Monte Carlo simulation software for the prediction of short circuit current value is carried out using the Ni-63 source with the activity of 2.7 mCi/cm2 and converters based on Si p-i-n diodes and SiC and GaN Schottky diodes. A comparison of experimentally measured and calculated short circuit current values confirms the validity of the proposed modeling method, with the difference in the measured and calculated short circuit current values not exceeding 25% and the error in the predicted output power values being below 30%. Effects of the protective layer formed on the Ni-63 radioactive film and of the passivating film on the semiconductor converters on the energy deposited inside the converters are estimated. The maximum attainable betavoltaic cell parameters are estimated.

• Publication year

  2018

• Venue

  Applied Radiation and Isotopes

• Publication date

  2018-04-05

• Fields of study

  Medicine, Materials Science, Physics, Engineering

• Identifiers
  DOI 10.1016/j.apradiso.2018.04.010PMID 29655122
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar, PubMed

• Protective and passivating films were evaluated as factors affecting energy deposited inside the converters, and maximum attainable betavoltaic cell parameters were estimated.

  Confidence 0.92

  박진우 (dztg5apj7m) extractionB (s683577b42) reviewq (76h6bfydm6) review
• Measured and calculated short circuit current values differed by no more than 25%, and the error in predicted output power stayed below 30%.

  Confidence 0.95

  박진우 (dztg5apj7m) extractionB (s683577b42) reviewq (76h6bfydm6) review
• Monte Carlo simulation software was validated against measurements for predicting short circuit current in Ni-63 betavoltaic converters built with Si p-i-n, SiC Schottky, and GaN Schottky diodes.

  Confidence 0.97

  박진우 (dztg5apj7m) extractionB (s683577b42) reviewq (76h6bfydm6) review

• betavoltaic cell parameters

  parameters, performance metrics

  The estimated maximum attainable performance parameters of the betavoltaic cell.

  Aliases: cell parameters, maximum attainable parameters

  박진우 (dztg5apj7m) extractionB (s683577b42) reviewq (76h6bfydm6) review
• energy deposited

  physical quantity, energy quantity

  The energy deposited inside the converter structure by incoming beta particles.

  Aliases: deposited energy

  박진우 (dztg5apj7m) extractionB (s683577b42) reviewq (76h6bfydm6) review
• gan schottky diodes

  converter, semiconductor device

  Gallium nitride Schottky diode converters used as one of the modeled betavoltaic converter types.

  Aliases: GaN Schottky diode converters, gallium nitride Schottky diodes

  박진우 (dztg5apj7m) extractionB (s683577b42) reviewq (76h6bfydm6) review
• monte carlo simulation software

  software, method

  A Monte Carlo-based software tool used to model betavoltaic converter response and predict current and power outputs.

  Aliases: Monte Carlo software, simulation software

  박진우 (dztg5apj7m) extractionB (s683577b42) reviewq (76h6bfydm6) review
• ni-63 source

  source, radioactive source

  A nickel-63 beta-emitting radioactive source with an activity of 2.7 mCi/cm2 used in the comparison.

  Aliases: Ni-63 radioactive source, nickel-63 source

  박진우 (dztg5apj7m) extractionB (s683577b42) reviewq (76h6bfydm6) review
• output power

  electrical quantity, performance metric

  The electrical power output predicted for the betavoltaic cell under the modeled operating conditions.

  Aliases: power output, predicted output power

  박진우 (dztg5apj7m) extractionB (s683577b42) reviewq (76h6bfydm6) review
• passivating film

  film, layer

  A film applied to the semiconductor converters that can affect particle energy deposition at the converter surface.

  Aliases: passivation film, passivation layer

  박진우 (dztg5apj7m) extractionB (s683577b42) reviewq (76h6bfydm6) review
• protective layer

  layer, film

  A layer formed on the Ni-63 radioactive film that can affect energy loss before particles enter the converter.

  Aliases: protective film, surface layer

  박진우 (dztg5apj7m) extractionB (s683577b42) reviewq (76h6bfydm6) review
• short circuit current

  electrical quantity, metric

  The current measured or calculated at zero external load for the betavoltaic converter.

  Aliases: Isc

  박진우 (dztg5apj7m) extractionB (s683577b42) reviewq (76h6bfydm6) review
• sic schottky diodes

  converter, semiconductor device

  Silicon carbide Schottky diode converters used as one of the modeled betavoltaic converter types.

  Aliases: SiC Schottky diode converters, silicon carbide Schottky diodes

  박진우 (dztg5apj7m) extractionB (s683577b42) reviewq (76h6bfydm6) review
• si p-i-n diode converters

  converter, semiconductor device

  Semiconductor betavoltaic converters built around silicon p-i-n diodes.

  Aliases: Si p-i-n diodes, silicon p-i-n diode converters

  박진우 (dztg5apj7m) extractionB (s683577b42) reviewq (76h6bfydm6) review

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