High-Q Fano resonances via direct excitation of an antisymmetric dark mode.

The engineering of metal-insulator-metal metasurfaces (MSs) displaying sharp spectral features based on Fano-type interference between a symmetric bright mode and an antisymmetric dark mode is reported. The proposed mechanism for direct excitation of antisymmetric mode avoids the necessity of mode hybridization through near-field coupling. Modeling and experimental results bring evidence that such MSs operating in the microwave or terahertz domains provide greater flexibility for Fano resonance engineering and provide strong enhancement of the spectral selectivity factor. It is shown that the occurring Fano resonance interference is related to the broken eigenmode orthogonality in open systems and is independent of hybridization mechanism.

• Publication year

  2018

• Venue

  Optics Letters

• Publication date

  2018-08-03

• Fields of study

  Medicine, Physics, Engineering

• Identifiers
  DOI 10.1364/OL.43.003818PMID 30106891
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar, PubMed

• No claims are published for this paper.

• No concepts are published for this paper.

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