An advanced sample preparation technique is demonstrated on a 3D Fin-FET structure. We present a step-by-step workflow to localize/mark a target structure (defect) in the horizontal plane of the sample and convert it into a vertical cross-section lamella which is inspected with STEM.
ABSTRACT
PUBLICATION RECORD
- Publication year
2018
- Venue
International Symposium on the Physical and Failure Analysis of Integrated Circuits
- Publication date
2018-07-01
- Fields of study
Materials Science, Engineering
- Identifiers
- External record
- Source metadata
Semantic Scholar
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