Fabrication of high-aspect ratio silicon nanopillars for tribological experiments

Abstract. This article reports the results of the fabrication of large arrays of nanopillars for future tribological experiments. This fabrication focused on achieving a constant high aspect ratio up to 1∶24 and a separation between each pair of adjacent pillars. Electron beam lithography was used to write patterns in hydrogen silsesquioxane (HSQ) negative tone resist. To achieve nanopillars of high aspect ratios and with smooth sides, deep reactive ion etching was employed with SF6 and O2 at cryogenic temperatures. Finally, the residual HSQ was removed using CHF3/O2 plasma etching in order to obtain a smooth finish.

• Publication year

  2015

• Venue

  Journal of Micro/Nanolithography, MEMS, and MOEMS

• Publication date

  2015-10-01

• Fields of study

  Materials Science, Engineering

• Identifiers
  DOI 10.1117/1.JMM.14.4.044506
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar

• No claims are published for this paper.

• No concepts are published for this paper.

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