Designing parameters for RF MOS cells

Demand of radio frequency switches using Metal-Oxide-Semiconductor (MOS) technology at high-frequencies for wireless telecommunication system is increasing drastically. This paper presents the results for the development of a cell library that includes the basics of the design parameters for n-MOS transistor and p-MOS transistor to design a RF CMOS switch. The cell library design includes the properties for RF circuit design standard and measurement outcomes are presented. The cell parameters presented here are calculated (designed) using 2.0 μm and 0.8 μm technology MOS integrated circuit. In this paper we discussed and found better result in terms of drain current for gate voltage of 2.1 V compare to 1.2 V, calculate the power for these voltages and time constant with help of contact resistance and capacitances [1].

• Publication year

  2010

• Venue

  2010 International Conference on Industrial Electronics, Control and Robotics

• Publication date

  2010-10-26

• Fields of study

  Physics, Computer Science, Engineering

• Identifiers
  DOI 10.4236/cs.2010.12008
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar

• No claims are published for this paper.

• No concepts are published for this paper.

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