Improved ohmic contact of Ga-Doped ZnO to p-GaN by using copper sulfide intermediate layers

No abstract is available for this paper.

• Publication year

  2013

• Venue

  Solid-state Electronics

• Publication date

  2013-11-01

• Fields of study

  Materials Science, Physics, Engineering

• Identifiers
  DOI 10.1016/J.SSE.2013.07.003
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar

• No claims are published for this paper.

• No concepts are published for this paper.

• Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum-Well Light-Emitting Diodes

  2013cited by this paper
• FDTD Analysis on Extraction Efficiency of GaN Light-Emitting Diodes With Microsphere Arrays

  2013cited by this paper
• Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

  2013cited by this paper
• First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters

  2013cited by this paper
• Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by Using 2-D Close-Packed ${\hbox{TiO}}_{2}$ Microsphere Arrays

  2013cited by this paper
• Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates

  2013cited by this paper
• Double embedded photonic crystals for extraction of guided light in light-emitting diodes

  2012cited by this paper
• Preparation and characterization of low resistivity CuS films using spray pyrolysis

  2012cited by this paper
• Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers

  2012cited by this paper
• In situ production of CuS particles in polymer electrolyte matrix for mixed ion+electron conduction

  2010cited by this paper
• Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact

  2010cited by this paper
• Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime

  2009cited by this paper
• Possible Ohmic Mechanisms of Ag/Indium Tin Oxide p-Type Contacts for High-Brightness GaN -Based Light Emitting Diodes

  2008cited by this paper
• Effect of sulfurization conditions on structural and electrical properties of copper sulfide films

  2008cited by this paper
• Ga-Doped ZnO Transparent Conductive Oxide Films Applied to GaN-Based Light-Emitting Diodes for Improving Light Extraction Efficiency

  2008cited by this paper
• Fabrication and microstructure of p-type transparent conducting CuS thin film and its application in dye-sensitized solar cell

  2008cited by this paper
• Dependence of the electrical and optical properties of sputter-deposited ZnO:Ga films on the annealing temperature, time, and atmosphere

  2007cited by this paper
• Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer

  2007cited by this paper
• Influence of thermal annealing ambient on Ga-doped ZnO thin films

  2007cited by this paper
• Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer

  2006cited by this paper
• Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN

  2003cited by this paper
• Effect of an indium-tin-oxide overlayer on transparent Ni/Au ohmic contact on p-type GaN

  2003cited by this paper
• Growth of conductive copper sulfide thin films by atomic layer deposition

  2002cited by this paper
• Conductive copper sulfide thin films on polyimide foils

  2001cited by this paper
• Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN

  2001cited by this paper
• Effect of an oxidized Ni/Au p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes

  2001cited by this paper
• p-GaN surface treatments for metal contacts

  2000cited by this paper
• Plasma damage in p-GaN

  2000cited by this paper
• Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment

  1999cited by this paper
• Effect of Au overlayer on Ni contacts to p-type GaN

  1999cited by this paper

• Physical Investigations on Mn3O4/ITO thin Film for Optoelectronic Applications

  2024cites this paper
• Plausibility of ultrathin CdTe solar cells: probing the beneficial role of MgZnO (MZO) high resistivity transparent (HRT) layer

  2023cites this paper
• Low resistance Ga-doped ZnO ohmic contact to p-GaN by reducing the sputtering power

  2018cites this paper
• Optimisation d’hétéro-structures à multipuits quantiques InGaN sur sous-couche InGaN pour diodes electroluminescentes émettant dans le domaine spectral bleu-vert

  2018cites this paper
• Investigation of p‐contact performance for indium rich InGaN based light emitting diodes and solar cells

  2017cites this paper
• Improved Light Extraction of GaN-based LED with Patterned Ga-doped ZnO Transparent Conducting Layer

  2016cites this paper
• Thermal Annealing Effects on the Performance of a Ga-Doped ZnO Transparent-Conductor Layer in a Light-Emitting Diode

  2015cites this paper
• Modulation behaviors of surface plasmon coupled light-emitting diode.

  2015cites this paper
• Multi-mechanism efficiency enhancement in growing Ga-doped ZnO as the transparent conductor on a light-emitting diode.

  2015cites this paper
• Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/CuxS contacts to p-GaN

  2015cites this paper
• Enhanced light emission in vertical-structured GaN-based light-emitting diodes with trench etching and arrayed p-electrodes

  2015cites this paper
• Ohmic Contacts on p‐GaN

  2015cites this paper
• Highly transparent conductive Ag/Ga2O3 electrode for near‐ultraviolet light‐emitting diodes

  2014cites this paper