{"corpus_id":100003731,"paper_sha":"78349fc68c9c812ab3574564aa6a8fc7b9dc3ecc","doi":"10.1149/2.0061609JSS","arxiv_id":null,"pmid":null,"pmcid":null,"mag_id":2888032590,"dblp_id":null,"acl_id":null,"title":"Editors' Choice Communication—A (001) β-Ga2O3 MOSFET with +2.9 V Threshold Voltage and HfO2 Gate Dielectric","year":2016,"publication_date":null,"venue":"","journal":{"name":"ECS Journal of Solid State Science and Technology","pages":"468","volume":"5"},"journal_issn":null,"journal_title":null,"publication_types":[],"pubmed_pub_types":null,"s2_fields_of_study":["Materials Science","Physics","Engineering"],"reference_count":18,"citation_count":126,"influential_citation_count":2,"is_open_access":true,"arxiv_categories":null,"arxiv_license":null,"arxiv_journal_ref":null,"mesh_headings":null,"chemicals":null,"comments_corrections":null,"source_flags":1,"s2_open_access_pdf_url":"https://iopscience.iop.org/article/10.1149/2.0061609jss/pdf","s2_open_access_landing_url":"https://www.semanticscholar.org/paper/78349fc68c9c812ab3574564aa6a8fc7b9dc3ecc","s2_open_access_license":"CCBY","s2_open_access_status":"HYBRID","pmc_open_access_pdf_url":null,"pmc_open_access_landing_url":null,"pmc_open_access_license":null,"pmc_open_access_status":null,"unpaywall_open_access_pdf_url":null,"unpaywall_open_access_landing_url":null,"unpaywall_open_access_license":null,"unpaywall_open_access_status":null,"abstract":"An MOS transistor fabricated on (001) β-Ga2O3 exfoliated from a commercial (−201) β-Ga2O3 substrate is reported. A maximum drain current of 11.1 mA/mm was measured, and a non-destructive breakdown was reached around 80 V in the off state. Threshold voltage of +2.9 V was extracted at 0.1 V drain bias, and peak transconductance of 0.18 mS/mm was measured at VDS = 1 V, corresponding to a field effect mobility of 0.17 cm2/Vs. Hall effect and electron spin resonance data suggested that electron conductivity was due primarily to O vacancy donors (VO+) with an estimated density of 2.3 × 1017 (±50%) cm−3.","claims":[{"public_id":"cl_945bdbf85aae629b90127ae31aaa8c60","status":"active","text":"A (001) β-Ga2O3 MOSFET fabricated from exfoliated material exhibits a threshold voltage of +2.9 V at 0.1 V drain bias.","confidence":0.98,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_945bdbf85aae629b90127ae31aaa8c60"},{"public_id":"cl_3be6f058585e966513923f7cf665fc84","status":"active","text":"Hall effect and electron spin resonance data indicate that electron conductivity is primarily due to O vacancy donors (VO+) with an estimated density of 2.3 × 10^17 cm−3.","confidence":0.95,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous 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