{"corpus_id":107829700,"paper_sha":"c94fdb767d2d0fdb3913cd3f7047f799ece2c321","doi":"10.1021/ACS.CHEMMATER.9B00654","arxiv_id":null,"pmid":null,"pmcid":null,"mag_id":2922415739,"dblp_id":null,"acl_id":null,"title":"The Era of Atomic Crafting","year":2019,"publication_date":"2019-03-12","venue":"Chemistry of Materials","journal":{"name":"Chemistry of Materials","pages":null,"volume":null},"journal_issn":null,"journal_title":null,"publication_types":[],"pubmed_pub_types":null,"s2_fields_of_study":[],"reference_count":8,"citation_count":19,"influential_citation_count":0,"is_open_access":false,"arxiv_categories":null,"arxiv_license":null,"arxiv_journal_ref":null,"mesh_headings":null,"chemicals":null,"comments_corrections":null,"source_flags":1,"s2_open_access_pdf_url":null,"s2_open_access_landing_url":null,"s2_open_access_license":null,"s2_open_access_status":null,"pmc_open_access_pdf_url":null,"pmc_open_access_landing_url":null,"pmc_open_access_license":null,"pmc_open_access_status":null,"unpaywall_open_access_pdf_url":null,"unpaywall_open_access_landing_url":null,"unpaywall_open_access_license":null,"unpaywall_open_access_status":null,"abstract":"T relentless pursuit of new approaches toward fabricating materials at the nanometer scale has been the driving force of the evolution of nanotechnology, ever since Richard Feynman proposed his vision of the potential of “more room at the bottom” in 1959. To meet this challenge, he launched the Feynman Prize to promote the development of novel nanofabrication methodologies. “Nanofabrication”, previously termed “microfabrication”, has seen extensive development over the last 60 years to cater the increasingly demanding needs of electronic devices in the silicon-based microelectronics industry for applications such as personal computers and smartphones. Nanofabrication is composed of three main subprocesses: (i) adding materials (deposition), (ii) defining patterns (photolithography), and (iii) removing materials (etching). Nanofabrication enables down-scaling with the potential for high-volume manufacturing (HVM). Therefore, in addition to satisfying the requirements of siliconbased industries, basic concepts of nanofabrication are widely employed for many other various applications, such as biological and energy devices. The technological evolution of modern electronic devices is progressing from 2D to 3D structures for better performance and higher capacity. Consequently, many subprocesses of nanofabrication have had to have been modified and improved. Moreover, new techniques are being introduced to meet the requirements of 3D nanostructuring. Atomic layer deposition (ALD) is a thin-film deposition technique usually carried out under vacuum conditions. Due to the self-limiting surface reactions of ALD, it has some important advantages, such as excellent conformality and thickness control at an atomic scale. These are the key requirements of 3D nanofabrication. Beyond the Si industry, the advantages of ALD are very attractive in fields of study that require small devices and structures in the nanometer scale. In 2007, ALD was first applied in commercial nanofabrication by depositing HfO2 gate dielectrics for logic transistors. Interestingly, however, other ALD breakthroughs in the Si industry are not in the field of deposition, but in that of patterning. To overcome the inherent limits of photolithography, a SiO2 spacer, conformally coated on a patterned photoresist by ALD, is used as the etching mask (Figure 1a). In doing so, the pattern size is determined by the thickness of the ALD-deposited SiO2, but not by the wavelength of the photolithographic light source. At the sub-tens-of-nanometers regime, another challenge for nanofabrication is patterning the interior of a 3D nanostructure. Due to anisotropic reactions during dry etching, removal of materials along the lateral direction is extremely difficult compared to that in the vertical direction (Figure 1b). One solution for this challenge is an etching-free selective deposition. One of the unique properties of ALD is that it is based upon surface reactions, allowing us to extend it to","claims":[{"public_id":"cl_ae4a7120b54122117682ed25460385e1","status":"active","text":"ALD-deposited SiO2 spacers can define sub-lithographic pattern sizes because the pattern size is determined by the deposited SiO2 thickness rather than the photolithographic light-source wavelength.","confidence":0.9,"contributors":[{"id":136,"public_id":"3c2apqe3ut","public_label":"Anonymous (3c2apqe3ut)","roles":["extraction"],"url":"https://sah.borca.ai/u/3c2apqe3ut"},{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["review"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_ae4a7120b54122117682ed25460385e1"},{"public_id":"cl_0d1544935f670680f5db24f88c70d317","status":"active","text":"Atomic layer deposition provides excellent conformality and atomic-scale thickness control through self-limiting surface reactions, making it 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