{"corpus_id":120140644,"paper_sha":"80fe27d676c547b75daaf79cbedf00b29b8d6d2a","doi":"10.1016/J.PHPRO.2013.10.022","arxiv_id":null,"pmid":null,"pmcid":null,"mag_id":1977689356,"dblp_id":null,"acl_id":null,"title":"Morphology, Structural and Dielectric Properties of Vacuum Evaporated V2O5 Thin Films","year":2013,"publication_date":null,"venue":"","journal":{"name":"Physics Procedia","pages":"158-165","volume":"49"},"journal_issn":null,"journal_title":null,"publication_types":[],"pubmed_pub_types":null,"s2_fields_of_study":["Materials Science","Physics"],"reference_count":14,"citation_count":13,"influential_citation_count":1,"is_open_access":false,"arxiv_categories":null,"arxiv_license":null,"arxiv_journal_ref":null,"mesh_headings":null,"chemicals":null,"comments_corrections":null,"source_flags":1,"s2_open_access_pdf_url":null,"s2_open_access_landing_url":null,"s2_open_access_license":null,"s2_open_access_status":null,"pmc_open_access_pdf_url":null,"pmc_open_access_landing_url":null,"pmc_open_access_license":null,"pmc_open_access_status":null,"unpaywall_open_access_pdf_url":null,"unpaywall_open_access_landing_url":null,"unpaywall_open_access_license":null,"unpaywall_open_access_status":null,"abstract":"Abstract Vanadium pentoxide (V2O5) thin films were deposited on well cleaned glass substrate using evaporation technique under the pressure of 10-5 Torr. The thickness of the films was measured by the multiple beam interferometry technique and cross checked by using capacitance method. Metal-Insulator-Metal (MIM) structure was fabricated by using suitable masks to study dielectric properties. The dielectric properties were studied by employing LCR meter in the frequency range 12 Hz to 100 kHz for various temperatures. The temperature co- efficient of permittivity (TCP), temperature co-efficient of capacitance (TCC) and dielectric constant (ɛ) were calculated. The activation energy was calculated and found to be very low. The activation energy was found to be increasing with increase in frequency. The obtained low value of activation energy suggested that the hopping conduction may be due to electrons rather than ions.","claims":[{"public_id":"cl_86b669b6ba4dac72c8a5c2b0b0a6f85a","status":"active","text":"A metal-insulator-metal structure was fabricated to study the dielectric properties of the films.","confidence":0.97,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_86b669b6ba4dac72c8a5c2b0b0a6f85a"},{"public_id":"cl_a8e026765d2fa92233dd440c3605882f","status":"active","text":"Low activation energy suggests that hopping conduction is due to electrons rather than ions.","confidence":0.9,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_a8e026765d2fa92233dd440c3605882f"},{"public_id":"cl_5d07e8849df11498ef635802ad7c723b","status":"active","text":"Temperature coefficient of permittivity, temperature coefficient of capacitance, and dielectric constant were calculated from frequency- and temperature-dependent dielectric measurements.","confidence":0.94,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_5d07e8849df11498ef635802ad7c723b"},{"public_id":"cl_d167fb93ee360805a2bc46d287bc0be9","status":"active","text":"The activation energy was very low and increased with increasing frequency.","confidence":0.96,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_d167fb93ee360805a2bc46d287bc0be9"},{"public_id":"cl_8fb8222a3f99ca57fcf0e55a8133a87f","status":"active","text":"Thickness was measured by multiple beam interferometry and cross-checked by capacitance method for vacuum evaporated V2O5 thin films.","confidence":0.98,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_8fb8222a3f99ca57fcf0e55a8133a87f"}],"concepts":[{"public_id":"co_0eb2914aca8a5375082fb0c8e190cac7","status":"active","name":"temperature coefficient of permittivity","description":"The rate of change of permittivity with temperature.","types":["electrical parameter"],"aliases":["TCP"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_0eb2914aca8a5375082fb0c8e190cac7"},{"public_id":"co_1041568fc54519bd010ddbc69b335df5","status":"active","name":"capacitance method","description":"A method used here to cross-check thin-film thickness measurements.","types":["measurement technique"],"aliases":[],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_1041568fc54519bd010ddbc69b335df5"},{"public_id":"co_206ba9f0cd2b2b05af62522862cd4627","status":"active","name":"activation energy","description":"The energy barrier associated with conduction or a thermally activated process.","types":["energy parameter"],"aliases":[],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_206ba9f0cd2b2b05af62522862cd4627"},{"public_id":"co_319883582fe9e5f93301a3c2f9a11cf6","status":"active","name":"dielectric constant","description":"A measure of a material's ability to polarize in response to an electric field.","types":["electrical parameter"],"aliases":["ɛ","permittivity"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_319883582fe9e5f93301a3c2f9a11cf6"},{"public_id":"co_37aef8154cf4fbef8a66d52348e9a28e","status":"active","name":"dielectric properties","description":"Electrical response characteristics of a material under an applied electric field.","types":["property"],"aliases":[],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_37aef8154cf4fbef8a66d52348e9a28e"},{"public_id":"co_59d039b4abec3f1629636fc5e7258c9f","status":"active","name":"vacuum evaporated V2O5 thin films","description":"V2O5 thin films prepared by evaporation under high vacuum.","types":["material"],"aliases":["vacuum evaporated vanadium pentoxide thin films"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_59d039b4abec3f1629636fc5e7258c9f"},{"public_id":"co_63bad65fde384d6cca4994fc1b4f2820","status":"active","name":"temperature coefficient of capacitance","description":"The rate of change of capacitance with temperature.","types":["electrical parameter"],"aliases":["TCC"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_63bad65fde384d6cca4994fc1b4f2820"},{"public_id":"co_7720a3af6952ffb687397a45aace5c33","status":"active","name":"hopping conduction","description":"Charge transport by carriers moving between localized states.","types":["conduction mechanism"],"aliases":[],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_7720a3af6952ffb687397a45aace5c33"},{"public_id":"co_8725e3ae1cd4345d6f44ce5fbf32507f","status":"active","name":"V2O5 thin films","description":"Thin-film samples of vanadium pentoxide deposited on glass substrates.","types":["material"],"aliases":["vanadium pentoxide thin films"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_8725e3ae1cd4345d6f44ce5fbf32507f"},{"public_id":"co_8ad567f71aa41eb0490e1968b639255a","status":"active","name":"multiple beam interferometry","description":"An optical technique used to measure film thickness.","types":["measurement technique"],"aliases":["MBI"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_8ad567f71aa41eb0490e1968b639255a"},{"public_id":"co_b29146b00a55038089f07bf659d1970d","status":"active","name":"ions","description":"Charged atomic or molecular species considered as alternative hopping carriers.","types":["charge carrier"],"aliases":[],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_b29146b00a55038089f07bf659d1970d"},{"public_id":"co_bee5abf78cb85258b7240207e14e6c6d","status":"active","name":"electrons","description":"Negatively charged elementary particles proposed here as the hopping carriers.","types":["charge carrier"],"aliases":[],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_bee5abf78cb85258b7240207e14e6c6d"},{"public_id":"co_d6feb13bab4f3a06b5a38ccc0acfdb05","status":"active","name":"frequency","description":"The measurement variable describing how often the applied electrical signal oscillates.","types":["measurement variable"],"aliases":[],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_d6feb13bab4f3a06b5a38ccc0acfdb05"},{"public_id":"co_fc90c4e5d9811df31b47bfa05c92dba9","status":"active","name":"metal-insulator-metal structure","description":"A layered device structure consisting of two metal electrodes separated by an insulating film.","types":["device structure"],"aliases":["MIM structure"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_fc90c4e5d9811df31b47bfa05c92dba9"}],"external_ids":{"DOI":"10.1016/J.PHPRO.2013.10.022","ArXiv":null,"PubMed":null,"PubMedCentral":null,"MAG":1977689356,"DBLP":null,"ACL":null},"open_access":{"is_open_access":false,"pdf_url":null,"landing_url":"https://sah.borca.ai/papers/120140644","source":null,"pdf_url_source":null,"license":null,"reason":"pdf_url_not_indexed"},"reference_availability":{"status":"available","references_indexed":true,"full_text_available":false,"full_text_source":null,"count_basis":"semantic_scholar_metadata","extraction_status":"not_applicable","reason":null},"source":{"provider":"episteme2","base_corpus":"semantic_scholar_dump","freshness_mode":"unknown","basis":["semantic_scholar_metadata","postgres_metadata"],"limits":["paper metadata is based on indexed upstream scholarly datasets","claims and concepts are available only for extracted papers","absence of claims or concepts means no extracted graph data is available in this response"],"status":"available","degraded":false,"degraded_reasons":[],"diagnostics":{"status":"available","degraded":false,"degraded_reasons":[],"metadata_status":"available","graph_status":"available","abstract_status":"available"},"source_flags":1},"paper_id":634019,"paper_uid":"3b30a4e5-026d-42bc-9db2-f22cd239ad29","canonical_identity":{"paper_id":634019,"paper_uid":"3b30a4e5-026d-42bc-9db2-f22cd239ad29","identity_status":"available","lookup_basis":"semantic_scholar_external_id","compatibility_path":"corpus_id"},"url":"https://sah.borca.ai/papers/120140644"}