{"corpus_id":120995376,"paper_sha":"9d0e62eb07619c71345a469d2b0c9ffe1d738942","doi":"10.1063/1.2964197","arxiv_id":null,"pmid":null,"pmcid":null,"mag_id":1986250062,"dblp_id":null,"acl_id":null,"title":"p-channel thin-film transistor using p-type oxide semiconductor, SnO","year":2008,"publication_date":"2008-07-25","venue":"","journal":{"name":"Applied Physics Letters","pages":"032113","volume":"93"},"journal_issn":null,"journal_title":null,"publication_types":[],"pubmed_pub_types":null,"s2_fields_of_study":["Materials Science","Physics","Engineering"],"reference_count":22,"citation_count":626,"influential_citation_count":5,"is_open_access":false,"arxiv_categories":null,"arxiv_license":null,"arxiv_journal_ref":null,"mesh_headings":null,"chemicals":null,"comments_corrections":null,"source_flags":1,"s2_open_access_pdf_url":null,"s2_open_access_landing_url":null,"s2_open_access_license":null,"s2_open_access_status":null,"pmc_open_access_pdf_url":null,"pmc_open_access_landing_url":null,"pmc_open_access_license":null,"pmc_open_access_status":null,"unpaywall_open_access_pdf_url":null,"unpaywall_open_access_landing_url":null,"unpaywall_open_access_license":null,"unpaywall_open_access_status":null,"abstract":"This paper reports that among known p-type oxide semiconductors, tin monoxide (SnO) has a high hole mobility and produces good p-type oxide thin-film transistors (TFTs). Device-quality SnO films were grown epitaxially on (001) yttria-stabilized zirconia substrates at 575°C by pulsed laser deposition. These exhibited a Hall mobility of 2.4cm2V−1s−1 at room temperature. Top-gated TFTs, using epitaxial SnO channels, exhibited field-effect mobilities of 1.3cm2V−1s−1, on/off current ratios of ∼102, and threshold voltages of 4.8V.","claims":[{"public_id":"cl_ebf9b1dc72632f037643e570bbc37203","status":"active","text":"Device-quality SnO films were grown epitaxially on (001) yttria-stabilized zirconia substrates at 575°C by pulsed laser deposition.","confidence":0.98,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_ebf9b1dc72632f037643e570bbc37203"},{"public_id":"cl_cf31aa68ec2667a30c3a675f62c6b30b","status":"active","text":"Epitaxial SnO films exhibited a Hall mobility of 2.4 cm2 V−1 s−1 at room temperature.","confidence":0.99,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_cf31aa68ec2667a30c3a675f62c6b30b"},{"public_id":"cl_64e27ae1f1ddb962a3fad1cfb30dc17a","status":"active","text":"Tin monoxide (SnO) has high hole mobility among known p-type oxide semiconductors and can produce good p-type oxide thin-film transistors.","confidence":0.98,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_64e27ae1f1ddb962a3fad1cfb30dc17a"},{"public_id":"cl_d2a728a4932965df2817b5fca34fc362","status":"active","text":"Top-gated TFTs using epitaxial SnO channels exhibited a field-effect mobility of 1.3 cm2 V−1 s−1, an on/off current ratio of about 10^2, and a threshold voltage of 4.8 V.","confidence":0.99,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous 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