{"corpus_id":122963968,"paper_sha":"8cdc465ce2b1c267cc1290251df368059d15b288","doi":"10.1143/JJAP.45.7565","arxiv_id":null,"pmid":null,"pmcid":null,"mag_id":2086023756,"dblp_id":null,"acl_id":null,"title":"Present Status and Future Prospect of Widegap Semiconductor High-Power Devices","year":2006,"publication_date":"2006-10-06","venue":"","journal":{"name":"Japanese Journal of Applied Physics","pages":"7565","volume":"45"},"journal_issn":null,"journal_title":null,"publication_types":["Review"],"pubmed_pub_types":null,"s2_fields_of_study":["Materials Science","Physics","Computer Science","Engineering"],"reference_count":41,"citation_count":304,"influential_citation_count":10,"is_open_access":true,"arxiv_categories":null,"arxiv_license":null,"arxiv_journal_ref":null,"mesh_headings":null,"chemicals":null,"comments_corrections":null,"source_flags":1,"s2_open_access_pdf_url":"http://iopscience.iop.org/article/10.1143/JJAP.45.7565/pdf","s2_open_access_landing_url":"https://www.semanticscholar.org/paper/8cdc465ce2b1c267cc1290251df368059d15b288","s2_open_access_license":null,"s2_open_access_status":"BRONZE","pmc_open_access_pdf_url":null,"pmc_open_access_landing_url":null,"pmc_open_access_license":null,"pmc_open_access_status":null,"unpaywall_open_access_pdf_url":null,"unpaywall_open_access_landing_url":null,"unpaywall_open_access_license":null,"unpaywall_open_access_status":null,"abstract":"High-power device technology is a key technological factor for wireless communication, which is one of the information network infrastructures in the 21st century, as well as power electronics innovation, which contributes considerably to solving the energy saving problem in the future energy network. 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