{"corpus_id":139807176,"paper_sha":"f3ada158e53c2e0a53fa4e0d15f9904893674fca","doi":"10.1016/J.MEE.2018.04.002","arxiv_id":null,"pmid":null,"pmcid":null,"mag_id":2796402327,"dblp_id":null,"acl_id":null,"title":"Improving performance of OFET by tuning occurrence of charge transport based on pentacene interaction with SAM functionalized contacts","year":2018,"publication_date":"2018-08-01","venue":"Microelectronic Engineering","journal":{"name":"Microelectronic Engineering","pages":null,"volume":null},"journal_issn":null,"journal_title":null,"publication_types":[],"pubmed_pub_types":null,"s2_fields_of_study":["Materials Science","Chemistry","Engineering"],"reference_count":36,"citation_count":26,"influential_citation_count":1,"is_open_access":false,"arxiv_categories":null,"arxiv_license":null,"arxiv_journal_ref":null,"mesh_headings":null,"chemicals":null,"comments_corrections":null,"source_flags":1,"s2_open_access_pdf_url":null,"s2_open_access_landing_url":null,"s2_open_access_license":null,"s2_open_access_status":null,"pmc_open_access_pdf_url":null,"pmc_open_access_landing_url":null,"pmc_open_access_license":null,"pmc_open_access_status":null,"unpaywall_open_access_pdf_url":null,"unpaywall_open_access_landing_url":null,"unpaywall_open_access_license":null,"unpaywall_open_access_status":null,"abstract":"Abstract Optimized pentacene thin film transistors have been achieved by two technological self-assembled monolayers (SAM) treatments, with surface modification of 3-octadecyltrichlorosilane (OTS) monolayer on SiO2 dielectric layer and 2,3,4,5,6-pentafluorobenzenethiol (PFBT) monolayer on gold source/drain electrodes, respectively. Higher mobility and on/off ratio with 0.36 cm2 V−1 s−1 and >106 are consistently investigated for films deposited on PFBT compared to on OTS, which could be explained by the different occurrence charge transport near the semiconductor/dielectric and semiconductor/electrodes interfaces. It can be further confirmed by XPS and electrical property measurements. In the end, a high mobility increased up to 0.68 cm2 V−1 s−1 was obtained by cumulative treatments of the two SAM. In particular, the improving performance of the organic thin films transistor devices through tuning the charge transport with SAM layers highlighting the utility of surface modulations and controlling of charge transport of interfaces in nanoscale materials.","claims":[{"public_id":"cl_6b780441e79db870865bc148e9370bfc","status":"active","text":"Combined OTS treatment on the dielectric layer and PFBT treatment on the electrodes increases mobility to 0.68 cm2 V−1 s−1.","confidence":0.93,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_6b780441e79db870865bc148e9370bfc"},{"public_id":"cl_fc8c2b503f0361bd09ec1bca42048315","status":"active","text":"PFBT-functionalized gold source/drain electrodes produce pentacene transistors with higher mobility and on/off ratio than OTS-treated devices, reaching 0.36 cm2 V−1 s−1 and greater than 10^6.","confidence":0.95,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_fc8c2b503f0361bd09ec1bca42048315"},{"public_id":"cl_d32f98d87f29adaac96c2c54741c5567","status":"active","text":"The performance gains are attributed to altered charge transport near the semiconductor/dielectric and semiconductor/electrode interfaces.","confidence":0.89,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_d32f98d87f29adaac96c2c54741c5567"},{"public_id":"cl_c1b13175f657c75da4a6ffc6aa3349e8","status":"active","text":"XPS and electrical property measurements support the interpretation that SAM surface treatments modify interfacial charge transport.","confidence":0.84,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_c1b13175f657c75da4a6ffc6aa3349e8"}],"concepts":[{"public_id":"co_1e5d58a6e571de523af8789823a0f470","status":"active","name":"electrical property measurements","description":"Electrical tests used to assess transistor performance such as mobility and on/off ratio.","types":["measurement"],"aliases":[],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_1e5d58a6e571de523af8789823a0f470"},{"public_id":"co_4469146ecdde1414da58512d1f948593","status":"active","name":"3-octadecyltrichlorosilane","description":"An alkylsilane used here to form a self-assembled monolayer on the SiO2 dielectric.","types":["surface treatment chemical"],"aliases":["OTS"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_4469146ecdde1414da58512d1f948593"},{"public_id":"co_62074cee0f11ea55820a33d59059c59f","status":"active","name":"self-assembled monolayers","description":"Ordered molecular monolayers formed on surfaces to modify interfacial properties.","types":["surface treatment","material"],"aliases":["SAM"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_62074cee0f11ea55820a33d59059c59f"},{"public_id":"co_7fe34af826a0765af8847b92c5902df9","status":"active","name":"charge transport","description":"The movement of charge carriers through the semiconductor and across interfaces.","types":["process"],"aliases":[],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_7fe34af826a0765af8847b92c5902df9"},{"public_id":"co_a2378702f62de74d5dec0a31f15df5dd","status":"active","name":"semiconductor/dielectric interfaces","description":"The boundary between the semiconductor layer and the dielectric layer in the transistor.","types":["interface"],"aliases":[],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_a2378702f62de74d5dec0a31f15df5dd"},{"public_id":"co_c9fb91cda14e98515dc09620d1147511","status":"active","name":"gold source/drain electrodes","description":"The gold electrode contacts that inject and collect charge carriers in the device.","types":["electrode"],"aliases":["Au source/drain electrodes"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_c9fb91cda14e98515dc09620d1147511"},{"public_id":"co_d5c5a729aa795084506402cc0161edbf","status":"active","name":"XPS","description":"X-ray photoelectron spectroscopy, used here to characterize surface and interfacial chemistry.","types":["measurement technique"],"aliases":["X-ray photoelectron spectroscopy"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_d5c5a729aa795084506402cc0161edbf"},{"public_id":"co_dd0fd049ae3c08b5bbabe3d55202a171","status":"active","name":"SiO2 dielectric layer","description":"The silicon dioxide insulating layer used as the transistor dielectric.","types":["material","dielectric"],"aliases":["SiO2 layer"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_dd0fd049ae3c08b5bbabe3d55202a171"},{"public_id":"co_e07cf6266c9c703f0cfaa60ab0425d0d","status":"active","name":"pentacene thin film transistors","description":"Organic thin-film transistor devices that use pentacene as the semiconductor layer.","types":["device"],"aliases":["pentacene TFTs"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_e07cf6266c9c703f0cfaa60ab0425d0d"},{"public_id":"co_f071b6be15abe3ad70ef55bf7bbb2fdc","status":"active","name":"2,3,4,5,6-pentafluorobenzenethiol","description":"A thiol molecule used here to form a self-assembled monolayer on gold source/drain electrodes.","types":["surface treatment chemical"],"aliases":["PFBT"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_f071b6be15abe3ad70ef55bf7bbb2fdc"},{"public_id":"co_f5fdd3252d51296055496f8bade49dd6","status":"active","name":"semiconductor/electrodes interfaces","description":"The boundary between the semiconductor layer and the source/drain electrodes in the transistor.","types":["interface"],"aliases":[],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_f5fdd3252d51296055496f8bade49dd6"}],"external_ids":{"DOI":"10.1016/J.MEE.2018.04.002","ArXiv":null,"PubMed":null,"PubMedCentral":null,"MAG":2796402327,"DBLP":null,"ACL":null},"open_access":{"is_open_access":false,"pdf_url":null,"landing_url":"https://sah.borca.ai/papers/139807176","source":null,"pdf_url_source":null,"license":null,"reason":"pdf_url_not_indexed"},"reference_availability":{"status":"available","references_indexed":true,"full_text_available":false,"full_text_source":null,"count_basis":"semantic_scholar_metadata","extraction_status":"not_applicable","reason":null},"source":{"provider":"episteme2","base_corpus":"semantic_scholar_dump","freshness_mode":"unknown","basis":["semantic_scholar_metadata","postgres_metadata"],"limits":["paper metadata is based on indexed upstream scholarly datasets","claims and concepts are available only for extracted papers","absence of claims or concepts means no extracted graph data is available in this response"],"status":"available","degraded":false,"degraded_reasons":[],"diagnostics":{"status":"available","degraded":false,"degraded_reasons":[],"metadata_status":"available","graph_status":"available","abstract_status":"available"},"source_flags":1},"paper_id":638329,"paper_uid":"d26ca169-d70b-4209-a3bc-f1748b535f06","canonical_identity":{"paper_id":638329,"paper_uid":"d26ca169-d70b-4209-a3bc-f1748b535f06","identity_status":"available","lookup_basis":"semantic_scholar_external_id","compatibility_path":"corpus_id"},"url":"https://sah.borca.ai/papers/139807176"}