{"corpus_id":20791905,"paper_sha":"fe297418763154fa4a17273011c11da2c58e42d2","doi":"10.1126/SCIENCE.1083212","arxiv_id":null,"pmid":12764192,"pmcid":null,"mag_id":2092426063,"dblp_id":null,"acl_id":null,"title":"Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor","year":2003,"publication_date":"2003-05-23","venue":"Science","journal":{"name":"Science","pages":"1269 - 1272","volume":"300"},"journal_issn":null,"journal_title":null,"publication_types":["JournalArticle"],"pubmed_pub_types":["Journal Article"],"s2_fields_of_study":["Materials Science","Physics","Medicine","Engineering"],"reference_count":13,"citation_count":1763,"influential_citation_count":17,"is_open_access":false,"arxiv_categories":null,"arxiv_license":null,"arxiv_journal_ref":null,"mesh_headings":null,"chemicals":null,"comments_corrections":null,"source_flags":5,"s2_open_access_pdf_url":null,"s2_open_access_landing_url":null,"s2_open_access_license":null,"s2_open_access_status":null,"pmc_open_access_pdf_url":null,"pmc_open_access_landing_url":null,"pmc_open_access_license":null,"pmc_open_access_status":null,"unpaywall_open_access_pdf_url":null,"unpaywall_open_access_landing_url":null,"unpaywall_open_access_license":null,"unpaywall_open_access_status":null,"abstract":"We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. 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