{"corpus_id":27941001,"paper_sha":"c98560d2e20a539079ae3cb13a112a7a36f46cb6","doi":"10.1126/SCIENCE.280.5370.1741","arxiv_id":null,"pmid":9624049,"pmcid":null,"mag_id":2094405563,"dblp_id":null,"acl_id":null,"title":"Integrated optoelectronic devices based on conjugated polymers","year":1998,"publication_date":"1998-06-12","venue":"Science","journal":{"name":"Science","pages":"\n          1741-4\n        ","volume":"280 5370"},"journal_issn":null,"journal_title":null,"publication_types":["JournalArticle"],"pubmed_pub_types":["Journal Article"],"s2_fields_of_study":["Medicine","Materials Science","Physics","Engineering"],"reference_count":10,"citation_count":2311,"influential_citation_count":19,"is_open_access":false,"arxiv_categories":null,"arxiv_license":null,"arxiv_journal_ref":null,"mesh_headings":null,"chemicals":null,"comments_corrections":null,"source_flags":5,"s2_open_access_pdf_url":null,"s2_open_access_landing_url":null,"s2_open_access_license":null,"s2_open_access_status":null,"pmc_open_access_pdf_url":null,"pmc_open_access_landing_url":null,"pmc_open_access_license":null,"pmc_open_access_status":null,"unpaywall_open_access_pdf_url":null,"unpaywall_open_access_landing_url":null,"unpaywall_open_access_license":null,"unpaywall_open_access_status":null,"abstract":"An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor (FET) driving a polymer light-emitting diode (LED) of similar size. The FET uses regioregular poly(hexylthiophene). Its performance approaches that of inorganic amorphous silicon FETs, with field-effect mobilities of 0.05 to 0.1 square centimeters per volt second and ON-OFF current ratios of >10(6). The high mobility is attributed to the formation of extended polaron states as a result of local self-organization, in contrast to the variable-range hopping of self-localized polarons found in more disordered polymers. The FET-LED device represents a step toward all-polymer optoelectronic integrated circuits such as active-matrix polymer LED displays.","claims":[{"public_id":"cl_b7e5bc53c924c40ebd62bf5ac764b7be","status":"active","text":"An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor driving a polymer light-emitting diode of similar size.","confidence":0.95,"contributors":[{"id":32,"public_id":"7c402c1b98","public_label":"뀨 (7c402c1b98)","roles":["extraction"],"url":"https://sah.borca.ai/u/7c402c1b98"},{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["review"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_b7e5bc53c924c40ebd62bf5ac764b7be"},{"public_id":"cl_f5dc4212d7f36cdde4774ed148b22aa9","status":"active","text":"The FET-LED device represents a step toward all-polymer optoelectronic integrated circuits such as active-matrix polymer LED 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