{"corpus_id":36953928,"paper_sha":"b278f3507e0555104158d9d5dadb4788763f3f7a","doi":"10.1038/nnano.2014.296","arxiv_id":"1506.06507","pmid":25531088,"pmcid":null,"mag_id":2037450282,"dblp_id":null,"acl_id":null,"title":"All-electric all-semiconductor spin field-effect transistors.","year":2015,"publication_date":"2015-06-22","venue":"Nature Nanotechnology","journal":{"name":"Nature nanotechnology","pages":"\n          35-9\n        ","volume":"10 1"},"journal_issn":null,"journal_title":null,"publication_types":["JournalArticle"],"pubmed_pub_types":["Journal Article","Research Support, Non-U.S. Gov't"],"s2_fields_of_study":["Medicine","Physics","Engineering"],"reference_count":31,"citation_count":330,"influential_citation_count":7,"is_open_access":true,"arxiv_categories":["cond-mat.mes-hall","cond-mat.mtrl-sci"],"arxiv_license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","arxiv_journal_ref":"Nature Nanotechnology 10, 35-39 (2015)","mesh_headings":null,"chemicals":null,"comments_corrections":null,"source_flags":5,"s2_open_access_pdf_url":"https://eprints.whiterose.ac.uk/87871/1/nnano6.pdf","s2_open_access_landing_url":"https://www.semanticscholar.org/paper/b278f3507e0555104158d9d5dadb4788763f3f7a","s2_open_access_license":null,"s2_open_access_status":"GREEN","pmc_open_access_pdf_url":null,"pmc_open_access_landing_url":null,"pmc_open_access_license":null,"pmc_open_access_status":null,"unpaywall_open_access_pdf_url":null,"unpaywall_open_access_landing_url":null,"unpaywall_open_access_license":null,"unpaywall_open_access_status":null,"abstract":"The spin field-effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field-effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to resistance mismatch, spin relaxation and the spread of spin precession angles. Alternative spin transistor designs have therefore been proposed, but these differ from the field-effect transistor concept and require the use of optical or magnetic elements, which pose difficulties for incorporation into integrated circuits. Here, we present an all-electric and all-semiconductor spin field-effect transistor in which these obstacles are overcome by using two quantum point contacts as spin injectors and detectors. Distinct engineering architectures of spin-orbit coupling are exploited for the quantum point contacts and the central semiconductor channel to achieve complete control of the electron spins (spin injection, manipulation and detection) in a purely electrical manner. Such a device is compatible with large-scale integration and holds promise for future spintronic devices for information processing.","claims":[{"public_id":"cl_55a3be965e1a61a1a3dabc0656bafe28","status":"active","text":"An all-electric and all-semiconductor spin field-effect transistor is realized by using two quantum point contacts as spin injectors and detectors.","confidence":0.98,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_55a3be965e1a61a1a3dabc0656bafe28"},{"public_id":"cl_6ee6e87fb7f9e931309431411428d119","status":"active","text":"Distinct spin-orbit coupling architectures in the quantum point contacts and central semiconductor channel provide complete electrical control of spin injection, manipulation, and detection.","confidence":0.96,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_6ee6e87fb7f9e931309431411428d119"},{"public_id":"cl_1ccf8fcf13cc2cb818a00b2c005a1ce0","status":"active","text":"The architecture is compatible with large-scale integration for spintronic information-processing devices.","confidence":0.88,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_1ccf8fcf13cc2cb818a00b2c005a1ce0"},{"public_id":"cl_d4af21977044b0269003c257b84a4be7","status":"active","text":"The device overcomes key obstacles that have hindered functional spin field-effect transistors, including resistance-mismatch-limited spin injection, spin relaxation, and spin-precession-angle spread.","confidence":0.93,"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/claims/cl_d4af21977044b0269003c257b84a4be7"}],"concepts":[{"public_id":"co_1bc5e4e3e50bf920b246c6d0b10a36da","status":"active","name":"resistance mismatch","description":"The conductivity mismatch between spin injector and semiconductor that suppresses spin injection efficiency.","types":["limitation"],"aliases":[],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_1bc5e4e3e50bf920b246c6d0b10a36da"},{"public_id":"co_24a0e59e36fc67ff8d86e89f62f48965","status":"active","name":"spin precession angles","description":"The range of spin rotation angles accumulated during transport through the device.","types":["measurement"],"aliases":[],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_24a0e59e36fc67ff8d86e89f62f48965"},{"public_id":"co_3867b4d26ce110c6fb8341a10ff0c6ae","status":"active","name":"spin-orbit coupling","description":"An interaction linking electron spin and orbital motion that is engineered here to control spin behavior.","types":["physical interaction"],"aliases":["SOC"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_3867b4d26ce110c6fb8341a10ff0c6ae"},{"public_id":"co_3954c4333f1e1b82929e5733e59625b7","status":"active","name":"all-electric and all-semiconductor spin field-effect transistor","description":"A spin transistor implemented entirely with electrical control in semiconductor materials without optical or magnetic components.","types":["device"],"aliases":["all-electric spin field-effect transistor","all-semiconductor spin FET"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_3954c4333f1e1b82929e5733e59625b7"},{"public_id":"co_397a799f17843a8d2cea4ed57c45d329","status":"active","name":"large-scale integration","description":"Compatibility with incorporation into integrated-circuit platforms at large system scale.","types":["integration property"],"aliases":[],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_397a799f17843a8d2cea4ed57c45d329"},{"public_id":"co_6305f73223967e1fd5910bacbb333700","status":"active","name":"spin detection","description":"The measurement or readout of spin state at the device output.","types":["process"],"aliases":[],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_6305f73223967e1fd5910bacbb333700"},{"public_id":"co_77a70a5261838248bb9f43f3163d29cd","status":"active","name":"spin field-effect transistor","description":"A transistor concept that uses an electric field to control spin-dependent electron transport.","types":["device concept"],"aliases":["spin FET","Datta-Das transistor"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_77a70a5261838248bb9f43f3163d29cd"},{"public_id":"co_967aaa12dfb83df4bd5815d8e13980f9","status":"active","name":"quantum point contacts","description":"Narrow constrictions in a semiconductor used here as spin injectors and detectors.","types":["device component"],"aliases":["QPCs"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_967aaa12dfb83df4bd5815d8e13980f9"},{"public_id":"co_a529fbf0b135cd24b1f229db29176099","status":"active","name":"spintronic devices for information processing","description":"Devices that use electron spin to perform information-processing functions.","types":["device class"],"aliases":["spintronic information-processing devices"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_a529fbf0b135cd24b1f229db29176099"},{"public_id":"co_b63a3e42fd71b01dfa58086a464aa8f5","status":"active","name":"central semiconductor channel","description":"The semiconductor transport region between the injector and detector where spins are manipulated.","types":["device component"],"aliases":["channel"],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_b63a3e42fd71b01dfa58086a464aa8f5"},{"public_id":"co_b893eb13942f69ff184b86f3b4b1b7ab","status":"active","name":"spin manipulation","description":"The electrical control of electron spin orientation during transport.","types":["process"],"aliases":[],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_b893eb13942f69ff184b86f3b4b1b7ab"},{"public_id":"co_bc8f419cbc46c0265a21d2915a9ebbbb","status":"active","name":"spin injection","description":"The process of introducing spin-polarized electrons into a transport channel.","types":["process"],"aliases":[],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_bc8f419cbc46c0265a21d2915a9ebbbb"},{"public_id":"co_e00e043bd3eff3d6f2e9432e7348ce5d","status":"active","name":"spin relaxation","description":"The loss of spin polarization over time or distance in a material.","types":["phenomenon"],"aliases":[],"contributors":[{"id":1,"public_id":"12632b8b5f","public_label":"Anonymous (12632b8b5f)","roles":["extraction"],"url":"https://sah.borca.ai/u/12632b8b5f"}],"url":"https://sah.borca.ai/concepts/co_e00e043bd3eff3d6f2e9432e7348ce5d"}],"external_ids":{"DOI":"10.1038/nnano.2014.296","ArXiv":"1506.06507","PubMed":25531088,"PubMedCentral":null,"MAG":2037450282,"DBLP":null,"ACL":null},"open_access":{"is_open_access":true,"pdf_url":"https://eprints.whiterose.ac.uk/87871/1/nnano6.pdf","landing_url":"https://www.semanticscholar.org/paper/b278f3507e0555104158d9d5dadb4788763f3f7a","source":"semantic_scholar","pdf_url_source":"semantic_scholar_open_access_pdf","license":null,"status":"GREEN","reason":null},"reference_availability":{"status":"available","references_indexed":true,"full_text_available":true,"full_text_source":"arxiv","count_basis":"semantic_scholar_metadata","extraction_status":"not_applicable","reason":null},"source":{"provider":"episteme2","base_corpus":"semantic_scholar_dump","freshness_mode":"unknown","basis":["semantic_scholar_metadata","postgres_metadata"],"limits":["paper metadata is based on indexed upstream scholarly datasets","claims and concepts are available only for extracted papers","absence of claims or concepts means no extracted graph data is available in this response"],"status":"available","degraded":false,"degraded_reasons":[],"diagnostics":{"status":"available","degraded":false,"degraded_reasons":[],"metadata_status":"available","graph_status":"available","abstract_status":"available"},"source_flags":5},"paper_id":631142,"paper_uid":"b4fc4df6-7b01-448c-9801-83030e62c156","canonical_identity":{"paper_id":631142,"paper_uid":"b4fc4df6-7b01-448c-9801-83030e62c156","identity_status":"available","lookup_basis":"semantic_scholar_external_id","compatibility_path":"corpus_id"},"url":"https://sah.borca.ai/papers/36953928"}