E. Lorfèvre

PROFILE

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Aliases
E. Lorfèvre, Eric Lorfèvre, Eric Lorfevre, E. Lorfevre, E Lorfevre
Publication record
98 papers · 1,274 citations · H-index 19

PAPERS

Analysis of multiscale structures at the quasi-perpendicular Venus bow shock Results from Solar Orbiter’s ﬁrst Venus
20220 citationsauthor #16
Interplanetary dust observations with the Solar Orbiter RPW instrument: a first year of data.
20210 citationsauthor #6
Statistical study of electron density turbulence and ion-cyclotron waves in the inner heliosphere: Solar Orbiter observations
202111 citationsauthor #20
Solar Orbiter Radio and Plasma Waves - Time Domain Sampler: In-flight performance and first results
202110 citationsauthor #16
Kinetic electrostatic waves and their association with current structures in the solar wind
202118 citationsauthor #15
First dust measurements with the Solar Orbiter Radio and plasma wave instrument
202125 citationsauthor #9
Measurement of Magnetic Field Fluctuations in the Parker Solar Probe and Solar Orbiter Missions
202110 citationsauthor #20
Solar Orbiter/RPW antenna calibration in the radio domain and its application to type III burst observations
20216 citationsauthor #15
Solar wind current sheets and deHoffmann-Teller analysis. First results from Solar Orbiter's DC electric field measurements
20213 citationsauthor #13
Density fluctuations associated with turbulence and waves. First observations by Solar Orbiter
202120 citationsauthor #14
First-year ion-acoustic wave observations in the solar wind by the RPW/TDS instrument on board Solar Orbiter
202117 citationsauthor #12
Impact induced electric field signals observed by the Solar Orbiter/RPW
20210 citationsauthor #11
Solar Orbiter/Radio and Plasma Wave observations during the first Venus flyby
20210 citationsauthor #9
Whistler waves observed by Solar Orbiter / RPW between 0.5 AU and 1 AU
202119 citationsauthor #23
The Solar Orbiter Radio and Plasma Waves (RPW) instrument
202076 citationsauthor #42
Single Events Induced By Heavy Ions and Laser Pulses in Silicon Schottky Diodes
201810 citationsauthor #6
TCAD prediction of dose effects on MOSFETs with ECORCE
20171 citationsauthor #8
The Power Law Shape of Heavy Ions Experimental Cross Section
20176 citationsauthor #5
Impact of multiple write cycles on the radiation sensitivity of NAND flash memory devices
20162 citationsauthor #9
TCAD simulations of leakage currents induced by SDRAM single-event cell degradation
20163 citationsauthor #7
Recent and upcoming observations of the CARacterisation et Modelisation de l'ENvironnement (CARMEN) mission
20161 citationsauthor #4
Dose Rate Switching Technique on ELDRS-Free Bipolar Devices
20169 citationsauthor #8
Benchmarking Ionizing Space Environment Models
201610 citationsauthor #9
Analysis of thermal annealing approach to extend electronic device lifetime
20150 citationsauthor #10
CARMEN1 and CARMEN2 Experiment: Comparison between In-Flight Measured SEE Rates and Predictions
20157 citationsauthor #4
Dose Effects on CMOS Active Pixel Sensors
20150 citationsauthor #9
Experimental Characterization and In-Flight Observation of Weakened Cell in SDRAM
20159 citationsauthor #8
Dose Rate Switching Technique to Estimate the Low Dose Rate Response of Bipolar Technologies
20153 citationsauthor #6
Generic Analytic Expression of Heavy Ion SEU Cross Section Derived from Monte-Carlo Diffusion-Based Prediction Code
20150 citationsauthor #6
Radiation Belt Activity Indices and Solar Proton Event Alarm
20142 citationsauthor #7
In-Flight Measurements of Radiation Environment on Board the Argentinean Satellite SAC-D
201419 citationsauthor #8
The ICARE-NG detectors' family: a new set of data for Earth's radiation belt characterization
20143 citationsauthor #5
On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination
20148 citationsauthor #9
Heavy Ion SEU Cross Section Calculation Based on Proton Experimental Data, and Vice Versa
201413 citationsauthor #6
Impact of Single Event Gate Rupture and Latent Defects on Power MOSFETs Switching Operation
20146 citationsauthor #12
Experimental Characterization and Simulation of Electron-Induced SEU in 45-nm CMOS Technology
201427 citationsauthor #9
Study of a Thermal Annealing Approach for Very High Total Dose Environments
201413 citationsauthor #9
SEU Cross Section Calculation Based on Experimental Data of Another kind of Particle
20140 citationsauthor #8
Unfolding JASON-2/ICARE-NG High-Energy Particles Measurements Using a Singular Value Decomposition Approach
20145 citationsauthor #7
Radiation Belt Activity Indices and Solar Proton Event Alarm on the CRATERRE project web site
20131 citationsauthor #7
Linear integrated circuit cumulated dose test representativeness for high energy electron environment applications
20132 citationsauthor #7
Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET
201311 citationsauthor #8
Unfolding JASON-2/ICARE-NG high energy particles measurements using a Singular Value Decomposition approach
20136 citationsauthor #7
Correlation of In-Flight Displacement Damage on the OSL Sensor With Space Environment On-Board Jason-2 Spacecraft
20132 citationsauthor #6
Post-Irradiation-Gate-Stress on Power MOSFETs: Quantification of Latent Defects-Induced Reliability Degradation
20135 citationsauthor #10
Correlation of in-flight displacement damage on the OSL sensor with space environment on-board Jason-2 spacecraft
20136 citationsauthor #6
Effect of Ion Energy on Power MOSFET's Oxide Reliability
20129 citationsauthor #4
Swift heavy ion-induced silicon dioxide nanostructuration: experimental observation of velocity effect
20125 citationsauthor #5
Investigation on the Single Event Burnout Sensitive Volume Using Two-Photon Absorption Laser Testing
20129 citationsauthor #5
A compact dosimeter for space applications
20121 citationsauthor #4
An improved version of the OSL sensor based on lessons learnt onboard JASON-2
20110 citationsauthor #4
In Flight Measurements of Radiation Environment on Board the French Satellite JASON-2
201144 citationsauthor #8
Imaging the Single Event Burnout sensitive volume of vertical power MOSFETs using the laser Two-Photon Absorption technique
20119 citationsauthor #6
Evaluation of ELDRS Mechanisms Using Dose Rate Switching Experiments on Gated Lateral PNP Transistors
201112 citationsauthor #9
CARMEN2/MEX: An in-flight laboratory for the observation of radiation effects on electronic devices
201119 citationsauthor #3
CARMEN-2: In flight observation of non destructive single event phenomena on memories
201124 citationsauthor #3
Synergy of non-ionizing and ionizing processes in the reliability degradation of Power MOSFETs oxide
20111 citationsauthor #6
Room temperature annealing effect on biased bipolar devices during switched dose-rate experiments
20111 citationsauthor #10
Shielding geometry effect on SEE prediction using the new OMERE release: JASON-2 mission case study
201110 citationsauthor #6
The Use of Electron-Beam Lithography for Localized Micro-Beam Irradiations
20113 citationsauthor #11
ELDRS: Optimization Tools for the Switched Dose Rate Technique
20113 citationsauthor #10
Investigation on the SEL Sensitive Depth of an SRAM Using Linear and Two-Photon Absorption Laser Testing
201140 citationsauthor #9
First In-Flight Data Analysis of Displacement Damage on the OSL Sensor On-Board CARMEN-2
201115 citationsauthor #7
The Use of a Dose-Rate Switching Technique to Characterize Bipolar Devices
200931 citationsauthor #9
Investigation of single event burnout sensitive depth in power MOSFETS
200911 citationsauthor #5
Bias Effects on Total Dose-Induced Degradation of Bipolar Linear Microcircuits for Switched Dose-Rate Irradiation
200920 citationsauthor #8
Contribution of Latent Defects Induced by High-Energy Heavy Ion Irradiation on the Gate Oxide Breakdown
200913 citationsauthor #11
In flight observation of proton induced destructive single event phenomena
200921 citationsauthor #2
Bias effects on total dose-induced degradation of bipolar linear microcircuits for switched dose-rate irradiation
20090 citationsauthor #8
Accelerated Irradiation Method to Study Synergy Effects in Bipolar Integrated Circuits
200925 citationsauthor #9
Review and Analysis of the Radiation-Induced Degradation Observed for the Input Bias Current of Linear Integrated Circuits
200826 citationsauthor #6
SEGR Study on Power MOSFETs: Multiple Impacts Assumption
200820 citationsauthor #12
High-Energy Heavy Ion Irradiation-Induced Structural Modifications: A Potential Physical Understanding of Latent Defects
200811 citationsauthor #13
SEGR study on Power MOSFETs: Multiple impacts assumption
20077 citationsauthor #11
Modeling temperature effects of thick oxide 60Co induced degradation under low electric field. Hardness assurance implications
20073 citationsauthor #4
CARMEN/MEX test board for the study of radiation effects on electronic components aboard JASON-2 and SAC-D satellites
200719 citationsauthor #2
Study of the Thermal Behavior of the OSL Integrated Sensor Response
200711 citationsauthor #7
Light Particle-Induced Single Event Degradation in SDRAMs
200620 citationsauthor #3
First observation of Single Event Dielectric Rupture on OP400 operational amplifier
20061 citationsauthor #2
Physical Model for the Low-Dose-Rate Effect in Bipolar Devices
200670 citationsauthor #6
Analysis of Total-Dose Response of a Bipolar Voltage Comparator Combining Radiation Experiments and Design Data
20067 citationsauthor #7
Analysis of Bias Effects on the Total-Dose Response of a Bipolar Voltage Comparator
200618 citationsauthor #7
Simultaneous Evaluation of TID and Displacement Damage Dose Using a Single OSL Sensor
200611 citationsauthor #10
Experimental Review of Si Commercial Devices Damage Sensitivity
20050 citationsauthor #3
Cosmic rayabundance inspace vehicles according to their LETandrange.
20050 citationsauthor #4
Analysis of Total-Dose Response of A Bipolar Voltage Comparator Combining Radiation Experiments And Design Data
200512 citationsauthor #6
Estimation of low-dose-rate degradation on bipolar linear integrated circuits using switching experiments
200546 citationsauthor #8
Online dosimetry based on optically stimulated luminescence materials
200518 citationsauthor #8
Analysis of the Bias Effect on the Total-Dose Response of a Linear Bipolar Comparator
20050 citationsauthor #6
Cosmic ray abundance in space vehicles according to their LET and range
20050 citationsauthor #4
Cell design modifications to harden an N-channel power IGBT against single event latchup
19996 citationsauthor #1
Failure mode of different irradiated power IGBT structures
19979 citationsauthor #1
arge sitive Area I A ~~bmicr~n C
19970 citationsauthor #3
SEB occurrence in a VIP: influence of the epi-substrate junction
19975 citationsauthor #1
SEU critical charge and sensitive area in a submicron CMOS technology
199791 citationsauthor #3
SEU sensitive depth in a submicron SRAM technology
19979 citationsauthor #4
Heavy ion induced failures in a power IGBT
199732 citationsauthor #1
SEGR and SEB in n-channel power MOSFETs
199691 citationsauthor #5

TIMELINE

1996 91 citations

1997 146 citations

1999 6 citations

2005 76 citations

2006 127 citations

2007 40 citations

2008 57 citations

2009 121 citations

2011 181 citations

2012 24 citations

2013 33 citations

2014 96 citations

2015 19 citations

2016 25 citations

2017 7 citations

2018 10 citations

2020 76 citations

2021 139 citations

2022 0 citations

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