Microstructure and Electrical Properties of Tantalum Oxide Thin Film Prepared by Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition

No abstract is available for this paper.

• Publication year

  1994

• Venue

  Japanese Journal of Applied Physics

• Publication date

  1994-12-15

• Fields of study

  Materials Science, Physics, Engineering

• Identifiers
  DOI 10.1143/JJAP.33.6691
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar

• No claims are published for this paper.

• No concepts are published for this paper.

• Effect of Annealing and Sulfur Passivation of GaAs Surface in ZnSe/GaAs Heterostructure

  1991cited by this paper

• Tantalum Oxide Thin Films Sputter-Deposited by Oxygen Gas Pulsing

  2023cites this paper
• Band alignment of Ta2O5 on sulphur passivated Germanium by X-ray photoelectron spectroscopy

  2015cites this paper
• Influence of the substrate bias voltage on the physical properties of dc reactive sputtered Ta2O5 films

  2013cites this paper
• Monolithic Integration of Nonlinear BA1‐xSRxTIO3 Thin Films with Affordable Silicon Substrates for Frequency Agile Microwave Device Applications

  2012cites this paper
• Impedance analysis of amorphous and polycrystalline tantalum oxide sputtered films

  2011cites this paper
• Resistance switching for RRAM applications

  2011cites this paper
• Valve Metal, Si and Ceramic Oxides as Dielectric Films for Passive and Active Electronic Devices

  2008cites this paper
• Improvement of interfacial and dielectric properties of sputtered Ta2O5 thin films by substrate biasing and the underlying mechanism

  2005cites this paper
• THIN FILM PROCESSING AND INTEGRATION METHODS TO ENALE AFFORDALE MOILE COMMUNICATIONS SYSTEMS

  2005cites this paper
• Charge trapping and conduction mechanisms in Ta2O5 on nitrided silicon

  2005cites this paper
• N-doped LaAlO3/Si(100) films with high-k, low-leakage current and good thermal stability

  2005cites this paper
• Properties of tantalum silicate thin films prepared by metalorganic decomposition

  2003cites this paper
• Evaluation of Ta2O5 as a buffer layer film for integration of microwave tunable Ba1−xSrxTiO3 based thin films with silicon substrates

  2002cites this paper
• Titanium dioxide thin-film growth on silicon(111) by chemical vapor deposition of titanium(IV) isopropoxide

  2002cites this paper
• Thermal Ta2O5--alternative to SiO2 for storage capacitor application

  2002cites this paper
• Influence of oxidation temperature on the microstructure and electrical properties of Ta2O5 on Si

  2002cites this paper
• The electrical properties of high-dielectric-constant and ferroelectric thin films for very large scale integration circuits

  2002cites this paper
• Investigation of the interlayer characteristics of Ta2O5 thin films deposited on bare, N2O, and NH3 plasma nitridated Si substrates

  2002cites this paper
• Ultrathin gate dielectric films for si-based microelectronic devices

  2002cites this paper
• Formation mechanism of interfacial Si–oxide layers during postannealing of Ta2O5/Si

  2001cites this paper
• Crystallization effects in oxygen annealed Ta2O5 thin films on Si

  2001cites this paper
• Chapter 9 - Thin Ta 2 O 5 Layers on Si as an Alternative to SiO 2 for High-Density DRAM Applications

  2001cites this paper
• Ta–O phonon peaks in tantalum oxide films on Si

  2001cites this paper
• Effects of rapid thermal annealing in vacuum on electrical properties of thin Ta2O5–Si structures

  2000cites this paper
• Thin RF sputtered and thermal Ta2O5 on Si for high density DRAM application

  1999cites this paper
• Formation of silicon–oxide layers at the interface between tantalum oxide and silicon substrate

  1999cites this paper
• Hydrogen annealing effect on the properties of thermal Ta2O5 on Si

  1999cites this paper
• Alternate Gate Oxides for Silicon Mosfets Using High- k Dielectrics

  1999cites this paper
• Effect of Al, Ta, and O Precursors on Growth and Properties of Al 2 O 3 and Ta 2 O 5 Thin Films Deposited by Triode PECVD

  1999cites this paper
• Thermal Ta2O5 films as a gate insulator for thin film capacitors

  1998cites this paper
• Microstructure and electric properties of the PZT thin films fabricated by ECR PECVD: the effects of an interfacial layer and rapid thermal annealing

  1998cites this paper
• Intermixing at the tantalum oxide/silicon interface in gate dielectric structures

  1998cites this paper
• Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications

  1998cites this paper
• Crystalline structures of the PbTiO3 films prepared using the ECR PECVD method

  1997cites this paper
• Trends in DRAM dielectrics

  1997cites this paper
• Conduction properties of amorphous Ta 2 O 5 films prepared by plasma enhanced chemical vapour deposition

  1996cites this paper
• C-axis orientation of AlN films prepared by ECR PECVD

  1996cites this paper
• Effects of process parameters on titanium dioxide thin film deposited using ECR MOCVD

  1996cites this paper
• Conduction properties of amorphous Ta2O5 films prepared by plasma enhanced chemical vapour deposition

  1995cites this paper
• Effects of deposition temperature on the electrical properties of electron cyclotron resonance plasma-enhanced chemical vapor deposition Ta_2O_5 film and the formation of interfacial SiO_2

  1995cites this paper