Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory

In this research, we analyzed the multi-functional role of a tunnel barrier that can be integrated in devices. This tunnel barrier, acting as an internal resistor, changes its resistance with applied bias. Therefore, the current flow in the devices can be controlled by a tunneling mechanism that modifies the tunnel barrier thickness for non-linearity and switching uniformity of devices. When a device is in a low-resistance state, the tunnel barrier controls the current behavior of the device because most of the bias is applied to the tunnel barrier owing to its higher resistance. Furthermore, the tunnel barrier induces uniform filament formation during set operation with the tunnel barrier controlling the current flow.

• Publication year

  2014

• Venue

  Nanoscale Research Letters

• Publication date

  2014-07-25

• Fields of study

  Medicine, Materials Science, Physics, Engineering

• Identifiers
  DOI 10.1186/1556-276X-9-364PMID 25114654PMCID 4118221
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar, PubMed

• No claims are published for this paper.

• No concepts are published for this paper.

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