Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices

No abstract is available for this paper.

• Publication year

  2013

• Venue

  IEEE Electron Device Letters

• Publication date

  2013-04-03

• Fields of study

  Physics, Engineering

• Identifiers
  DOI 10.1109/LED.2013.2251314
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar

• No claims are published for this paper.

• No concepts are published for this paper.

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