Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor

No abstract is available for this paper.

• Publication year

  2011

• Venue

  Advances in Materials

• Publication date

  2011-12-15

• Fields of study

  Medicine, Materials Science, Physics, Engineering

• Identifiers
  DOI 10.1002/adma.201103379PMID 22065427
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar, PubMed

• No claims are published for this paper.

• No concepts are published for this paper.

• Feedback write scheme for memristive switching devices

  2011cited by this paper
• Dopant Control by Atomic Layer Deposition in Oxide Films for Memristive Switches

  2011cited by this paper
• A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.

  2011cited by this paper
• Metal/TiO2 interfaces for memristive switches

  2011cited by this paper
• Spectromicroscopy of tantalum oxide memristors

  2011cited by this paper
• Two-Step Forming Process in Planar-Type Cu2O-Based Resistive Switching Devices

  2011cited by this paper
• Collective Motion of Conducting Filaments in Pt/n‐Type TiO2/p‐Type NiO/Pt Stacked Resistance Switching Memory

  2011cited by this paper
• Conversion from unipolar to bipolar resistance switching by inserting Ta2O5 layer in Pt/TaOx/Pt cells

  2011cited by this paper
• Memory effects in complex materials and nanoscale systems

  2010cited by this paper
• Resistive switches and memories from silicon oxide.

  2010cited by this paper
• Nanoscale memristor device as synapse in neuromorphic systems.

  2010cited by this paper
• High switching endurance in TaOx memristive devices

  2010cited by this paper
• Learning Abilities Achieved by a Single Solid‐State Atomic Switch

  2010cited by this paper
• Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

  2010cited by this paper
• Complementary resistive switches for passive nanocrossbar memories.

  2010cited by this paper
• Modeling for bipolar resistive memory switching in transition-metal oxides

  2010cited by this paper
• ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

  2010cited by this paper
• Silicon oxide: a non-innocent surface for molecular electronics and nanoelectronics studies.

  2010cited by this paper
• Nanoscale memory devices

  2010cited by this paper
• Direct Identification of the Conducting Channels in a Functioning Memristive Device

  2010cited by this paper
• Resistive switching in nanogap systems on SiO2 substrates.

  2009cited by this paper
• Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors

  2009cited by this paper
• Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.

  2009cited by this paper
• Memristor-CMOS hybrid integrated circuits for reconfigurable logic.

  2009cited by this paper
• Programmable resistance switching in nanoscale two-terminal devices.

  2009cited by this paper
• Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

  2009cited by this paper
• Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior.

  2009cited by this paper
• The mechanism of electroforming of metal oxide memristive switches

  2009cited by this paper
• Switching dynamics in titanium dioxide memristive devices

  2009cited by this paper
• Study of multi-ON states in nonvolatile memory based on metal-insulator-metal structure

  2009cited by this paper
• Force modulation of tunnel gaps in metal oxide memristive nanoswitches

  2009cited by this paper
• Random Circuit Breaker Network Model for Unipolar Resistance Switching

  2008cited by this paper
• Memristive switching mechanism for metal/oxide/metal nanodevices.

  2008cited by this paper
• Programmable Resistance Switching in Nanoscale Two-terminal Devices

  2008cited by this paper
• The missing memristor found

  2008cited by this paper
• Resistive switching in transition metal oxides

  2008cited by this paper
• Low current resistive switching in Cu–SiO2 cells

  2008cited by this paper
• Technology and metrology of new electronic materials and devices.

  2007cited by this paper
• Nanoionics-based resistive switching memories.

  2007cited by this paper
• Role of Oxygen Vacancies in Cr‐Doped SrTiO3 for Resistance‐Change Memory

  2007cited by this paper
• The crystal structure of high temperature phase Ta2O5

  2007cited by this paper
• Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution

  2007cited by this paper
• Field-programmable rectification in rutile TiO2 crystals

  2007cited by this paper
• Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides.

  2006cited by this paper
• Redox-driven conductance switching via filament formation and dissolution in carbon/molecule/TiO2/Ag molecular electronic junctions.

  2006cited by this paper
• Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

  2006cited by this paper
• Electron transport and redox reactions in carbon-based molecular electronic junctions.

  2006cited by this paper
• A Low-Power Nonvolatile Switching Element Based on Copper-Tungsten Oxide Solid Electrolyte

  2006cited by this paper
• Nanoscale memory elements based on solid-state electrolytes

  2005cited by this paper
• Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

  2005cited by this paper
• Effect of Alumina Additions on Microstructural Aspects of the β to α Transformation in Tantalum (V) Oxide

  2005cited by this paper
• Quantized conductance atomic switch

  2005cited by this paper
• Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

  2004cited by this paper
• Nonvolatile memory with multilevel switching: a basic model.

  2004cited by this paper
• Direct Observation of Nanoscale Switching Centers in Metal/Molecule/Metal Structures

  2004cited by this paper
• A comprehensive thermodynamic theory of the Soret effect in a multicomponent gas, liquid, or solid

  2001cited by this paper
• Electric-pulse-induced reversible resistance change effect in magnetoresistive films

  2000cited by this paper
• Theory of thermophoresis. I. General considerations and mode-coupling analysis

  1983cited by this paper
• Memristive devices and systems

  1976cited by this paper
• Memristor-The missing circuit element

  1971cited by this paper
• Electrical phenomena in amorphous oxide films

  1970cited by this paper
• Effects of Nitrogen, Methane, and Oxygen on Structure and Electrical Properties of Thin Tantalum Films

  1964cited by this paper

• A Complementary Metal Oxide Semiconductor Compatible Memristor Based on Titanium Dioxide for Neuromorphic Computing

  2025cites this paper
• A thermodynamic interpretation of the phase field method for the computational study of memristive electric conduction

  2025cites this paper
• ЗАКОНОМЕРНОСТИ РАСПРЕДЕЛЕНИЯ ЭЛЕКТРИЧЕСКОГО ПОЛЯ И КИСЛОРОДНЫХ ВАКАНСИЙ В НАНОРАЗМЕРНЫХ МЕМРИСТОРНЫХ СТРУКТУРАХ НА ОСНОВЕ ТОНКИХ ПЛЕНОК ОКСИДА ТИТАНА ДЛЯ СИСТЕМ ГИБКОЙ ЭЛЕКТРОНИКИ

  2025cites this paper
• Molecular Simulations on Threshold Displacement Energy in Amorphous Tantalum Pentoxide

  2025cites this paper
• Effect of 60Co γ‐Ray Irradiation on the Linearity of Conductance Updating of the HfOx:Mg(9%)‐Based Memristive Synapses Studied by Electrochemical Impedance Spectroscopy

  2025cites this paper
• Parametric study of “filament and gap” models of resistive switching in TaOx-based devices.

  2025cites this paper
• A morphologically self-consistent phase field model for the computational study of memristive thin film current – voltage hysteresis

  2025cites this paper
• Molecular-Layer-Deposited Amino Acid Hybrid Memristor: Bilayer Design Enabling Robust Synaptic Plasticity and Image Recognition.

  2025cites this paper
• Electrical Behavior of Combinatorial Thin-Film ZrxTa1−xOy

  2025cites this paper
• Reliable Resistive Switching and Multifunctional Synaptic Behavior in ZnO/NiO Nanocomposite Based Memristors for Neuromorphic Computing

  2024cites this paper
• Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices.

  2024cites this paper
• CsPbI3 Perovskite Quantum Dot-Based WORM Memory Device with Intrinsic Ternary States

  2024cites this paper
• Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices

  2024cites this paper
• Thermodynamic origin of nonvolatility in resistive memory

  2024cites this paper
• Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies

  2024cites this paper
• Chalcogen Vacancy Engineering of Two-Dimensional Transition Metal Dichalcogenides for Electronic Applications

  2024cites this paper
• The Role of Hydrogen in ReRAM

  2024cites this paper
• In Operando Near‐Field Optical Investigation of Memristive Ta2O5 Thin Film Devices with a Graphene Top Electrode

  2024cites this paper
• Cycle endurance and failure in ITO/MEH-PPV/Al resistive switching devices

  2024cites this paper
• Floating-gate memristor based on a MoS2/h-BN/AuNPs mixed-dimensional heterostructure

  2024cites this paper
• The degradation mechanism and stability enhancement of GaSe lateral memristors

  2024cites this paper
• Cobalt-doped zinc oxide based memristors with nociceptor characteristics for bio-inspired technology

  2024cites this paper
• Nanolayered NbO2-Based Dynamic Memristor for Leaky Integrate and Fire Neuron

  2024cites this paper
• Advances of embedded resistive random access memory in industrial manufacturing and its potential applications

  2024cites this paper
• Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics

  2023cites this paper
• Exploiting device-level non-idealities for adversarial attacks on ReRAM-based neural networks

  2023cites this paper
• Hardware Trojan prevention using memristor technology

  2023cites this paper
• Resistive switching conducting filament electroformation with an electrothermal phase field method

  2023cites this paper
• Quantum Transport Properties of Nanosized Ta2O5 Resistive Switches: Variable Transmission Atomic Synapses for Neuromorphic Electronics

  2023cites this paper
• Hybrid Tuning of Sub‐Filaments to Improve Analog Switching Performance in Memristive Devices

  2023cites this paper
• Neural Information Processing and Time‐Series Prediction with Only Two Dynamical Memristors

  2023cites this paper
• Effekt rezistivnogo pereklyucheniya v memristorakh TaN/HfOx/Ni s filamentom, sformirovannym pod deystviem lokal'noy elektronno-luchevoy kristallizatsii

  2023cites this paper
• Thousands of conductance levels in memristors integrated on CMOS

  2023cites this paper
• Temperature Distribution in TaOx Resistive Switching Devices Assessed In Operando by Scanning Thermal Microscopy

  2023cites this paper
• Tantalum Pentoxide (Ta2o5 and Ta2o5-X)-Based Memristor for Photonic In-Memory Computing Application

  2023cites this paper
• Ferroelectric field effect transistors for electronics and optoelectronics

  2023cites this paper
• Adhesion Microscopy as a Nanoscale Probe for Oxidation and Charge Generation at Metal-Oxide Interfaces

  2023cites this paper
• Visualizing the Local Composition Changes during Resistive Switching in Planar TaOx-ReRAMs

  2023cites this paper
• Annealing induced cation diffusion in TaOx-based memristor and its compatibility for back-end-of-line post-processing

  2022cites this paper
• Application of the Quantum-Point-Contact Formalism to Model the Filamentary Conduction in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Ta</mml:mi></mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="sc

  2022cites this paper
• Picosecond Time‐Scale Resistive Switching Monitored in Real‐Time

  2022cites this paper
• 2D materials and van der Waals heterojunctions for neuromorphic computing

  2022cites this paper
• A Compact Model of Interface-Type Memristors Linking Physical and Device Properties

  2022cites this paper
• Uniform, fast, and reliable CMOS compatible resistive switching memory

  2022cites this paper
• Atomic-scale tuning of ultrathin memristors

  2022cites this paper
• Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications

  2022cites this paper
• Mathematical simulation of memristive for classification in machine learning

  2022cites this paper
• Mechanical Behaviors of the Origami-Inspired Horseshoe-Shaped Solar Arrays

  2022cites this paper
• Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism

  2022cites this paper
• Memristors, Spintronics and 2D Materials for Future Computing Systems

  2022cites this paper
• A Bifunctional Memristor Enables Multiple Neuromorphic Computing Applications

  2022cites this paper
• Memristive, Spintronic, and 2D‐Materials‐Based Devices to Improve and Complement Computing Hardware

  2022cites this paper
• A Scalable Artificial Neuron Based on Ultrathin Two-Dimensional Titanium Oxide.

  2021cites this paper
• Compliance-Current Manipulation of Dual-Filament Switching in a Ta/Ta2O5/In−Sn−O Structure with an Ultralow Power Consumption

  2021cites this paper
• Memristors: A Journey from Material Engineering to Beyond Von-Neumann Computing

  2021cites this paper
• Resistive Random Access Memory Device Physics and Array Architectures

  2021cites this paper
• Design of memristor materials from ordered-vacancy zincblende semiconductors

  2021cites this paper
• Optimization of Memristive Crossbar Array for Physical Unclonable Function Applications

  2021cites this paper
• Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire

  2021cites this paper
• Fabrication of Tantalum Oxyfluoride and Oxynitride Thin Films via Ammonolysis of Sol-Gel Processed Tetraethoxo (β-diketonato) Tantalum (V) Precursors for Enhanced Photocatalytic Activity

  2021cites this paper
• A True Random Number Generator Based on Ionic Liquid Modulated Memristors

  2021cites this paper
• Uniform and robust TiN/HfO2/Pt memristor through interfacial Al-doping engineering

  2021cites this paper
• Controllable high-performance memristors based on 2D Fe2GeTe3 oxide for biological synapse imitation

  2021cites this paper
• Memristor-transistor hybrid ternary content addressable memory using ternary memristive memory cell

  2021cites this paper
• A nanoscale Cu2−xSe ultrathin film deposited via atomic layer deposition and its memristive effects

  2021cites this paper
• Polymer Nanocomposites for Resistive Switching Memory

  2021cites this paper
• Electron tunneling between vibrating atoms in a copper nano-filament

  2021cites this paper
• A Comprehensive FIB Lift-out Sample Preparation Method for Scanning Probe Microscopy

  2021cites this paper
• Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness

  2021cites this paper
• A Comprehensive FIB Lift-out Sample Preparation Method for Scanning Probe Microscopy

  2021cites this paper
• Fabrication of tantalum oxyfluoride and oxynitride thin films via ammonolysis of sol–gel processed tetraethoxo (β-diketonato) tantalum (V) precursors for enhanced photocatalytic activity

  2021cites this paper
• Nanoionic memristive phenomena in metal oxides: the valence change mechanism

  2021cites this paper
• Charge transport mechanism in the forming-free memristor based on silicon nitride

  2021cites this paper
• Memory Properties of SiOx- and SiNx-Based Memristors

  2021cites this paper
• Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

  2021cites this paper
• Bipolar resistive switching, synaptic plasticity and non-volatile memory effects in the solution-processed zinc oxide thin film

  2020cites this paper
• Multilevel memristive non-volatile look-up table using two transmission gates one memristor memory cells

  2020influential citation
• Flexible and thermally stable resistive switching memory in a Ta/TaOx/stainless steel structure

  2020cites this paper
• Electromechanical coupling effects for data storage and synaptic devices

  2020cites this paper
• Grain-boundary structures and their impact on the electrical properties of NiO films deposited by reactive sputtering

  2020cites this paper
• Flexible full two-dimensional memristive synapses of graphene/WSe2-xOy/graphene.

  2020cites this paper
• Spike neural network architecture with memristive synapses using predictive Cmos model

  2020cites this paper
• Towards an automated design flow for memristor based VLSI circuits

  2020cites this paper
• Comparative study of electron-beam crystallization of amorphous hafnium oxides HfO2 and HfOx (x = 1.82)

  2020cites this paper
• Improved uniformity in resistive switching behaviors by embedding Cu nanodots

  2020cites this paper
• Impact of Ta/Ti electrodes on linearities of TaOx-based resistive random-access memories for neuromorphic computing

  2020cites this paper
• Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation

  2020cites this paper
• Atomistic Simulations for Understanding Microscopic Mechanism of Resistive Switches

  2020cites this paper
• Nanoionic Redox based Resistive Switching Devices as Synapse for Bio-inspired Computing Architectures: A Survey

  2020cites this paper
• All-Passive Hardware Implementation of Multilayer Perceptron Classifiers

  2020cites this paper
• Understanding of the Abrupt Resistive Transition in Different Types of Threshold Switching Devices From Materials Perspective

  2020cites this paper
• Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics

  2020cites this paper
• Solution-processed, low voltage tantalum-based memristive switches

  2020cites this paper
• Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si

  2020cites this paper
• Current status and prospects of memristors based on novel 2D materials

  2020cites this paper
• A comprehensive review on emerging artificial neuromorphic devices

  2020cites this paper
• Oxidation of Fine Tantalum Particles: Metastable Intermediates and Multistep Kinetics

  2020cites this paper
• Influence of MoS2 quantum dots size on the properties of memristor devices

  2020cites this paper
• Resistive switching materials for information processing

  2020cites this paper
• Influence of the active TaN/ZrO x /Ni memristor layer oxygen content on forming and resistive switching behavior

  2020cites this paper