SCIENCE@home

Growth and Characterization of Ternary HfxTayOz Films via Nitrogen-Infused Wet Oxidation

H. J. Quah,Farah Hayati Ahmad,W. F. Lim,Z. Hassan

Published 2020 in ACS Omega

ABSTRACT

Nitrogen-infused wet oxidation at different temperatures (400–1000 °C) was employed to transform tantalum–hafnia to hafnium-doped tantalum oxide films. High-temperature wet oxidation at 1000 °C marked an onset of crystallization occurring in the film, accompanied with the formation of an interfacial oxide due to a reaction between the inward-diffusing hydroxide ions, which were dissociated from the water molecules during wet oxidation. The existence of nitrogen has assisted in controlling the interfacial oxide formation. However, high-temperature oxidation caused a tendency for the nitrogen to desorb and form N–H complex after reacting with the hydroxide ions. Besides, the presence of N–H complex implied a decrease in the passivation at the oxide–Si interface by hydrogen. As a consequence, defect formation would happen at the interface and influence the metal–oxide–semiconductor characteristics of the samples. In comparison, tantalum–hafnia subjected to nitrogen-infused wet oxidation at 600 °C has obtained the highest dielectric constant, the largest band gap, and the lowest slow trap density.

PUBLICATION RECORD

CITATION MAP

EXTRACTION MAP

CLAIMS

  • No claims are published for this paper.

CONCEPTS

  • No concepts are published for this paper.

REFERENCES

Showing 1-47 of 47 references · Page 1 of 1

CITED BY

Showing 1-5 of 5 citing papers · Page 1 of 1