Analysis of short-term NBTI effect on the Single-Event Upset sensitivity of a 65nm SRAM using two-photon absorption

No abstract is available for this paper.

• Publication year

  2013

• Venue

  European Conference on Radiation and Its Effects on Components and Systems

• Publication date

  2013-09-01

• Fields of study

  Materials Science, Physics, Engineering

• Identifiers
  DOI 10.1109/RADECS.2013.6937408
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar

• No claims are published for this paper.

• No concepts are published for this paper.

• Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell

  2013cited by this paper
• Negative Bias Temperature Instability Effect on the Single Event Transient Sensitivity of a 65 nm CMOS Technology

  2013cited by this paper
• A comprehensive and critical re-assessment of 2-stage energy level NBTI model

  2012cited by this paper
• A 32nm SRAM reliability macro for recovery free evaluation of NBTI and PBTI

  2012cited by this paper
• A physics based model for NBTI in p-MOSFETs

  2012cited by this paper
• Effect of Negative Bias Temperature Instability on the Single Event Upset Response of 40 nm Flip-Flops

  2012cited by this paper
• Simultaneous extraction of threshold voltage and mobility degradation from on-the-fly NBTI measurements

  2011cited by this paper
• Investigation on the SEL Sensitive Depth of an SRAM Using Linear and Two-Photon Absorption Laser Testing

  2011cited by this paper
• Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs

  2011cited by this paper
• Impact of NBTI Aging on the Single-Event Upset of SRAM Cells

  2010cited by this paper
• Temperature dependence of NBTI induced delay

  2010cited by this paper
• Accelerated Irradiation Method to Study Synergy Effects in Bipolar Integrated Circuits

  2009cited by this paper
• Analog Circuit Design (chapter 5)

  2009cited by this paper
• The Impact of Aging Effects and Manufacturing Variation on SRAM Soft-Error Rate

  2008cited by this paper
• Basic mechanisms and modeling of single-event upset in digital microelectronics

  2003cited by this paper
• Theoretical Investigation of an Equivalent Laser LET

  2001cited by this paper

• A Survey on Field Effect Transistor Based Hydrogen and Nitrogen Gas Sensors

  2022cites this paper
• CHIPIR Neutron Spallation RADSAGA CAMPAIGN

  2021cites this paper
• Data-Retention-Voltage-Based Analysis of Systematic Variations in SRAM SEU Hardness: A Possible Solution to Synergistic Effects of TID

  2020cites this paper
• Palladium-based trench gate MOSFET for highly sensitive hydrogen gas sensor

  2020cites this paper
• Reliability analysis of memories suffering MBUs for the effect of negative bias temperature instability

  2017cites this paper
• Ageing Impact on a High Speed Voltage Comparator with Hysteresis

  2016cites this paper