Improved off-current and subthreshold slope in aggressively scaled poly-Si TFTs with a single grain boundary in the channel

No abstract is available for this paper.

• Publication year

  2004

• Venue

  IEEE Transactions on Electron Devices

• Publication date

  2004-01-30

• Fields of study

  Materials Science, Physics, Engineering

• Identifiers
  DOI 10.1109/TED.2003.821577
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar

• No claims are published for this paper.

• No concepts are published for this paper.

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