Physical understanding on the interface states and grain boundary defects of polysilicon nanowires

This paper investigates effects of interface states and grain boundary defects on the electrical characteristics and provides insight into the nature of interface states and grain boundary defects of polysilicon nanowires (NWs) prepared by industry standard deposition and etch. It is found that acceptor-like interface states affect the leakage current whereas donor-like interface states affect both subthreshold and drive current characteristic of accumulation mode p-type polysilicon NW. Intrinsic grain boundary defects inside polysilicon exhibit quit interesting trend. The shallow acceptor or donor like states do not affect the electrical characteristics at all, whereas deep level acceptor like states significantly affect the leakage current. Deep level donor like states also significantly affect NW's subthreshold and drive current characteristic. The observed influence of location, type and energy level of defect states on the electrical characteristics of NW are used to calibrate the characteristic of p-type polysilicon NW fabricated by deposition and etch thereby provided a physical understanding on the nature of interface states and grain boundary defects of polysilicon nanowires.

• Publication year

  2018

• Venue

  International Conference on Electrical and Control Engineering

• Publication date

  2018-12-01

• Fields of study

  Materials Science, Physics, Engineering

• Identifiers
  DOI 10.1109/ICECE.2018.8636707
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar

• No claims are published for this paper.

• No concepts are published for this paper.

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