Universal recovery behavior of negative bias temperature instability [PMOSFETs]

No abstract is available for this paper.

• Publication year

  2003

• Venue

  IEEE International Electron Devices Meeting 2003

• Publication date

  2003-12-08

• Fields of study

  Materials Science, Physics, Engineering

• Identifiers
  DOI 10.1109/IEDM.2003.1269294
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar

• No claims are published for this paper.

• No concepts are published for this paper.

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