Thermoelectric SnTe with Band Convergence, Dense Dislocations, and Interstitials through Sn Self-Compensation and Mn Alloying.

SnTe is known as an eco-friendly analogue of PbTe without toxic elements. However, the application potentials of pure SnTe are limited because of its high hole carrier concentration derived from intrinsic Sn vacancies, which lead to a high electrical thermal conductivity and low Seebeck coefficient. In this study, Sn self-compensation and Mn alloying could significantly improve the Seebeck coefficients in the whole temperature range through simultaneous carrier concentration optimization and band engineering, thereby leading to a large improvement of the power factors. Combining precipitates and atomic-scale interstitials due to Mn alloying with dense dislocations induced by long time annealing, the lattice thermal conductivity is drastically reduced. As a result, an enhanced figure of merit (ZT) of 1.35 is achieved for the composition of Sn0.94 Mn0.09 Te at 873 K and the ZTave from 300 to 873 K is boosted to 0.78, which is of great significance for practical application. Hitherto, the ZTmax and ZTave of this work are the highest values among all single-element-doped SnTe systems.

• Publication year

  2018

• Venue

  Small

• Publication date

  2018-08-17

• Fields of study

  Medicine, Materials Science, Physics, Engineering

• Identifiers
  DOI 10.1002/smll.201802615PMID 30117655
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar, PubMed

• No claims are published for this paper.

• No concepts are published for this paper.

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