Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides

We report density-functional-theory calculations of the electronic band structures and optical absorption spectra of two-dimensional crystals of Ga2X2 (X= S, Se, and Te). Our calculations show that all three two-dimensional materials are dynamically stable indirect-band-gap semiconductors with a sombrero dispersion of holes near the top of the valence band. We predict the existence of Lifshitz transitions—changes in the Fermi-surface topology of hole-doped Ga2X2—at hole concentrations nS=7.96×1013 cm−2, nSe=6.13×1013 cm−2, and nTe=3.54×1013 cm−2.

• Publication year

  2013

• Venue

  Physical Review B

• Publication date

  2013-02-25

• Fields of study

  Materials Science, Physics

• Identifiers
  DOI 10.1103/PhysRevB.87.195403arXiv 1302.6067
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar

• No claims are published for this paper.

• No concepts are published for this paper.

• No references are available for this paper.

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