Probing the bonding and electronic structure of single atom dopants in graphene with electron energy loss spectroscopy.

A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations reveal striking electronic structure differences between two distinct single substitutional Si defect geometries in graphene. Optimised acquisition conditions allow for exceptional signal-to-noise levels in the spectroscopic data. The near-edge fine structure can be compared with great accuracy to simulations and reveal either an sp(3)-like configuration for a trivalent Si or a more complicated hybridized structure for a tetravalent Si impurity.

• Publication year

  2013

• Venue

  Nano letters (Print)

• Publication date

  2013-01-04

• Fields of study

  Materials Science, Physics, Medicine

• Identifiers
  DOI 10.1021/nl304187ePMID 23259533
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar, PubMed

• No claims are published for this paper.

• No concepts are published for this paper.

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