Physical model of threshold switching in NbO2 based memristors

No abstract is available for this paper.

• Publication year

  2015

• Venue

  RSC Advances

• Publication date

  2015-11-27

• Fields of study

  Materials Science, Physics, Engineering

• Identifiers
  DOI 10.1039/C5RA19300A
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar

• No claims are published for this paper.

• No concepts are published for this paper.

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